Dose dependence of microstructural development of buried oxide in oxygen implanted silicon-on-insulator material

S. Bagchi, Stephen Krause, P. Roitman

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29 Scopus citations

Abstract

The effect of implantation dose on microstructural development of the buried oxide (BOX) of 200 keV oxygen implanted Si was studied by electron microscopy. A continuous BOX layer with a low density of Si islands was obtained for a dose of 0.45×1018 cm-2, following high temperature annealing. At a lower dose of 0.225×1018 cm-2 a layer did not form, but only disjointed, isolated, oxide precipitates developed. At a higher dose, 0.675×1018 cm-2, a continuous BOX layer with a high density of Si islands formed. Microstructures of intermediate-temperature annealed samples showed the formation of oxide precipitates at preferred depths, the morphology being dose dependent. The final microstructure of the BOX is strongly influenced by the evolution of the oxide precipitates during annealing. A qualitative mechanism is proposed for the dose-dependent behavior of BOX formation during the annealing process.

Original languageEnglish (US)
Pages (from-to)2136-2138
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number15
DOIs
StatePublished - Oct 13 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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