Doping of direct gap Ge1-ySny Alloys to attain electroluminescence and enhanced photoluminescence

C. L. Senaratne, J. D. Gallagher, C. Xu, P. E. Sims, Jose Menendez, John Kouvetakis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Fingerprint

Dive into the research topics of 'Doping of direct gap Ge1-ySny Alloys to attain electroluminescence and enhanced photoluminescence'. Together they form a unique fingerprint.

Engineering & Materials Science