Doping of direct gap Ge1-ySny Alloys to attain electroluminescence and enhanced photoluminescence

C. L. Senaratne, J. D. Gallagher, C. Xu, P. E. Sims, Jose Menendez, John Kouvetakis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Low temperature (T <300°C) in-situ doping protocols were developed for Ge1-ySny alloys with compositions above the indirect-to-direct gap crossover point, which were deposited using CVD. Trisilylphosphine (P(SiH3)3) was used as the n-type dopant source while diborane (B2H6) was used for p-type doping. This enabled the fabrication of pin diode structures with compositions up to y = 0.137. These photodiodes exhibit electroluminescence at wavelengths up to 2700 nm. Furthermore, it was demonstrated that n-type doping enhances the photoluminescence obtained from these materials.

Original languageEnglish (US)
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages157-164
Number of pages8
Volume69
Edition14
ISBN (Print)9781607685395
DOIs
StatePublished - 2015
EventSymposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting - Phoenix, United States
Duration: Oct 11 2015Oct 15 2015

Other

OtherSymposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting
CountryUnited States
CityPhoenix
Period10/11/1510/15/15

Fingerprint

Electroluminescence
Photoluminescence
Doping (additives)
Photodiodes
Chemical analysis
Chemical vapor deposition
Diodes
Fabrication
Wavelength
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Senaratne, C. L., Gallagher, J. D., Xu, C., Sims, P. E., Menendez, J., & Kouvetakis, J. (2015). Doping of direct gap Ge1-ySny Alloys to attain electroluminescence and enhanced photoluminescence. In ECS Transactions (14 ed., Vol. 69, pp. 157-164). Electrochemical Society Inc.. https://doi.org/10.1149/06914.0157ecst

Doping of direct gap Ge1-ySny Alloys to attain electroluminescence and enhanced photoluminescence. / Senaratne, C. L.; Gallagher, J. D.; Xu, C.; Sims, P. E.; Menendez, Jose; Kouvetakis, John.

ECS Transactions. Vol. 69 14. ed. Electrochemical Society Inc., 2015. p. 157-164.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Senaratne, CL, Gallagher, JD, Xu, C, Sims, PE, Menendez, J & Kouvetakis, J 2015, Doping of direct gap Ge1-ySny Alloys to attain electroluminescence and enhanced photoluminescence. in ECS Transactions. 14 edn, vol. 69, Electrochemical Society Inc., pp. 157-164, Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting, Phoenix, United States, 10/11/15. https://doi.org/10.1149/06914.0157ecst
Senaratne CL, Gallagher JD, Xu C, Sims PE, Menendez J, Kouvetakis J. Doping of direct gap Ge1-ySny Alloys to attain electroluminescence and enhanced photoluminescence. In ECS Transactions. 14 ed. Vol. 69. Electrochemical Society Inc. 2015. p. 157-164 https://doi.org/10.1149/06914.0157ecst
Senaratne, C. L. ; Gallagher, J. D. ; Xu, C. ; Sims, P. E. ; Menendez, Jose ; Kouvetakis, John. / Doping of direct gap Ge1-ySny Alloys to attain electroluminescence and enhanced photoluminescence. ECS Transactions. Vol. 69 14. ed. Electrochemical Society Inc., 2015. pp. 157-164
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