Doping of direct gap Ge1-ySny Alloys to attain electroluminescence and enhanced photoluminescence

C. L. Senaratne, J. D. Gallagher, C. Xu, P. E. Sims, Jose Menendez, John Kouvetakis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Low temperature (T < 300°C) in-situ doping protocols were developed for Ge1-ySny alloys with compositions above the indirect-to-direct gap crossover point, which were deposited using CVD. Trisilylphosphine (P(SiH3)3) was used as the n-type dopant source while diborane (B2H6) was used for p-type doping. This enabled the fabrication of pin diode structures with compositions up to y = 0.137. These photodiodes exhibit electroluminescence at wavelengths up to 2700 nm. Furthermore, it was demonstrated that n-type doping enhances the photoluminescence obtained from these materials.

Original languageEnglish (US)
Title of host publicationState-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58
EditorsC. Jagadish, Y. L. Wang, C. O'Dwyer, J. K. Hite, F. Ren, S. Jang, J. H. He, E. Douglas, R. P. Lynch, T. J. Anderson
PublisherElectrochemical Society Inc.
Pages157-164
Number of pages8
Edition14
ISBN (Electronic)9781607685395
DOIs
StatePublished - Jan 1 2015
EventSymposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting - Phoenix, United States
Duration: Oct 11 2015Oct 15 2015

Publication series

NameECS Transactions
Number14
Volume69
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting
CountryUnited States
CityPhoenix
Period10/11/1510/15/15

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Senaratne, C. L., Gallagher, J. D., Xu, C., Sims, P. E., Menendez, J., & Kouvetakis, J. (2015). Doping of direct gap Ge1-ySny Alloys to attain electroluminescence and enhanced photoluminescence. In C. Jagadish, Y. L. Wang, C. O'Dwyer, J. K. Hite, F. Ren, S. Jang, J. H. He, E. Douglas, R. P. Lynch, & T. J. Anderson (Eds.), State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58 (14 ed., pp. 157-164). (ECS Transactions; Vol. 69, No. 14). Electrochemical Society Inc.. https://doi.org/10.1149/06914.0157ecst