Doping-induced type-II to type-I transition and mid-IR optical gain in InAs/AlSb quantum wells

K. I. Kolokolov, Cun-Zheng Ning

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We study effects of modulation doping in a type-II quantum well by performing a self-consistent band structure calculation using the 8-band k · p theory. We show that modulation doping can convert a type-II quantum well structures into type-I. The associated band bending and charge redistribution lead to strong interband transition in such type-II structures comparable to that of a type-I quantum well. The results are shown for InAs/AlSb quantum well, where TM mode optical gain can be as high as 4000cm -1. We also studied effects of doping on differential gain.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsC.F. Gmachl, D.P. Bour
Pages259-266
Number of pages8
Volume5365
DOIs
StatePublished - 2004
Externally publishedYes
EventNovel In-Plane Semiconductor Lasers III - San Jose, CA, United States
Duration: Jan 26 2004Jan 28 2004

Other

OtherNovel In-Plane Semiconductor Lasers III
CountryUnited States
CitySan Jose, CA
Period1/26/041/28/04

Keywords

  • Heterostructures
  • Mid infrared
  • Multiband Hamiltonian
  • Optical gain
  • Quantum wells
  • Type-II

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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  • Cite this

    Kolokolov, K. I., & Ning, C-Z. (2004). Doping-induced type-II to type-I transition and mid-IR optical gain in InAs/AlSb quantum wells. In C. F. Gmachl, & D. P. Bour (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 5365, pp. 259-266) https://doi.org/10.1117/12.530465