Abstract
We study effects of modulation doping in a type-II quantum well by performing a self-consistent band structure calculation using the 8-band k · p theory. We show that modulation doping can convert a type-II quantum well structures into type-I. The associated band bending and charge redistribution lead to strong interband transition in such type-II structures comparable to that of a type-I quantum well. The results are shown for InAs/AlSb quantum well, where TM mode optical gain can be as high as 4000cm -1. We also studied effects of doping on differential gain.
Original language | English (US) |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Editors | C.F. Gmachl, D.P. Bour |
Pages | 259-266 |
Number of pages | 8 |
Volume | 5365 |
DOIs | |
State | Published - 2004 |
Externally published | Yes |
Event | Novel In-Plane Semiconductor Lasers III - San Jose, CA, United States Duration: Jan 26 2004 → Jan 28 2004 |
Other
Other | Novel In-Plane Semiconductor Lasers III |
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Country/Territory | United States |
City | San Jose, CA |
Period | 1/26/04 → 1/28/04 |
Keywords
- Heterostructures
- Mid infrared
- Multiband Hamiltonian
- Optical gain
- Quantum wells
- Type-II
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics