Abstract
A study was performed on the doping-induced type-II to type-I transition and interband optical gain in InAs/AlSb quantum wells. The interband gain for TM mode was as high as 4000 1/cm. The TE and the TM gain as functions of doping level and intrinsic electron-hole density were also discussed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1581-1583 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 83 |
| Issue number | 8 |
| DOIs | |
| State | Published - Aug 25 2003 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)