Doping-induced type-II to type-I transition and interband optical gain in InAs/AISb quantum wells

K. I. Kolokolov, C. Z. Ning

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

A study was performed on the doping-induced type-II to type-I transition and interband optical gain in InAs/AlSb quantum wells. The interband gain for TM mode was as high as 4000 1/cm. The TE and the TM gain as functions of doping level and intrinsic electron-hole density were also discussed.

Original languageEnglish (US)
Pages (from-to)1581-1583
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number8
DOIs
StatePublished - Aug 25 2003
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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