A study was performed on the doping-induced type-II to type-I transition and interband optical gain in InAs/AlSb quantum wells. The interband gain for TM mode was as high as 4000 1/cm. The TE and the TM gain as functions of doping level and intrinsic electron-hole density were also discussed.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)