Doping-induced type-II to type-I transition and interband optical gain in InAs/AISb quantum wells

K. I. Kolokolov, Cun-Zheng Ning

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A study was performed on the doping-induced type-II to type-I transition and interband optical gain in InAs/AlSb quantum wells. The interband gain for TM mode was as high as 4000 1/cm. The TE and the TM gain as functions of doping level and intrinsic electron-hole density were also discussed.

Original languageEnglish (US)
Pages (from-to)1581-1583
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number8
DOIs
StatePublished - Aug 25 2003
Externally publishedYes

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quantum wells

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Doping-induced type-II to type-I transition and interband optical gain in InAs/AISb quantum wells. / Kolokolov, K. I.; Ning, Cun-Zheng.

In: Applied Physics Letters, Vol. 83, No. 8, 25.08.2003, p. 1581-1583.

Research output: Contribution to journalArticle

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