Doping dependence of the optical dielectric function in n-type germanium

Research output: Contribution to journalArticle

Abstract

The doping dependence of the most important optical transitions in n-type Ge (E 0 , E ind , E 1 , E 1 + Δ 1 , E 0 ′, and E 2 ) has been studied using photoluminescence and UV-Vis ellipsometry methods. By using high activity Ge sources, such as Ge 3 H 8 and Ge 4 H 10 , and new-generation doping precursors, including P(GeH 3 ) 3 , As(GeH 3 ) 3 , and SbD 3 , doping levels approaching 1.5 × 10 20 cm −3 have been achieved with flat dopant profiles, abrupt n/i interfaces, and close-to-unity dopant activation ratios. The excellent sample quality enabled measurements over sufficiently broad doping ranges to demonstrate, contrary to prior assumptions, that the electronic energy bands do not shift rigidly upon doping and that the different contributions to bandgap renormalization are donor-dependent. It is also shown that simple models of band filling effects provide a quantitative explanation of the doping dependence of critical point parameters such as amplitudes and phase angles. The analysis presented here yields new insights into the physics of highly-doped semiconductor and should facilitate the design of novel Ge-based group-IV microelectronic and photoelectronic devices.

Original languageEnglish (US)
Article number085704
JournalJournal of Applied Physics
Volume125
Issue number8
DOIs
StatePublished - Feb 28 2019

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germanium
photoelectronics
optical transition
microelectronics
ellipsometry
energy bands
unity
critical point
phase shift
activation
photoluminescence
physics
shift
profiles
electronics

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Doping dependence of the optical dielectric function in n-type germanium. / Xu, Chi; Kouvetakis, John; Menendez, Jose.

In: Journal of Applied Physics, Vol. 125, No. 8, 085704, 28.02.2019.

Research output: Contribution to journalArticle

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