Doping dependence of the mobility enhancement in surface-channel strained-Si layers

Dragica Vasileska, Gabriele Formicone, David K. Ferry

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

In this paper we present simulation results for the doping dependence of the mobility enhancement in surface-channel strained-Si layers grown on relaxed Si1-xGex buffers. Our numerical results show that there is a significant reduction of the mobility enhancement with increasing substrate doping. At first, this result questioned the performance increase in devices based on these novel Si-based heteroepitaxy concepts when scaled to deep-submicron dimensions. However, we find that this is not really a problem since in devices with non-uniform doping profiles, representative of the state-of-the-art technology, significant mobility enhancement is still observed.

Original languageEnglish (US)
Pages (from-to)147-152
Number of pages6
JournalNanotechnology
Volume10
Issue number2
DOIs
StatePublished - Jun 1999

Fingerprint

Doping (additives)
augmentation
Epitaxial growth
Buffers
buffers
Substrates
profiles
simulation

ASJC Scopus subject areas

  • Engineering (miscellaneous)
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Doping dependence of the mobility enhancement in surface-channel strained-Si layers. / Vasileska, Dragica; Formicone, Gabriele; Ferry, David K.

In: Nanotechnology, Vol. 10, No. 2, 06.1999, p. 147-152.

Research output: Contribution to journalArticle

Vasileska, Dragica ; Formicone, Gabriele ; Ferry, David K. / Doping dependence of the mobility enhancement in surface-channel strained-Si layers. In: Nanotechnology. 1999 ; Vol. 10, No. 2. pp. 147-152.
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