Abstract
In this paper we present simulation results for the doping dependence of the mobility enhancement in surface-channel strained-Si layers grown on relaxed Si1-xGex buffers. Our numerical results show that there is a significant reduction of the mobility enhancement with increasing substrate doping. At first, this result questioned the performance increase in devices based on these novel Si-based heteroepitaxy concepts when scaled to deep-submicron dimensions. However, we find that this is not really a problem since in devices with non-uniform doping profiles, representative of the state-of-the-art technology, significant mobility enhancement is still observed.
Original language | English (US) |
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Pages (from-to) | 147-152 |
Number of pages | 6 |
Journal | Nanotechnology |
Volume | 10 |
Issue number | 2 |
DOIs | |
State | Published - Jun 1999 |
ASJC Scopus subject areas
- Bioengineering
- General Chemistry
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering