Doping dependence of the mobility enhancement in surface-channel strained-Si layers

Dragica Vasileska, Gabriele Formicone, David K. Ferry

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

In this paper we present simulation results for the doping dependence of the mobility enhancement in surface-channel strained-Si layers grown on relaxed Si1-xGex buffers. Our numerical results show that there is a significant reduction of the mobility enhancement with increasing substrate doping. At first, this result questioned the performance increase in devices based on these novel Si-based heteroepitaxy concepts when scaled to deep-submicron dimensions. However, we find that this is not really a problem since in devices with non-uniform doping profiles, representative of the state-of-the-art technology, significant mobility enhancement is still observed.

Original languageEnglish (US)
Pages (from-to)147-152
Number of pages6
JournalNanotechnology
Volume10
Issue number2
DOIs
StatePublished - Jun 1 1999

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ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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