Doping dependence of second breakdown in a p-n junction

H. C. Chen, W. M. Portnoy, D. K. Ferry

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The delay time before the onset of second breakdown was measured at the collector-base junctions of four types silicon n-p-n planar transistors. The dependence of delay time on input power was found to obey a relationshiop of the form pτn = constant. The value of n increased slightly, and the value of the constant decreased, with decreasing collector doping. For all four types of transistors, n was close to 0.5, and when a curve of the form pτ 1 2 = constant was fitted to the experimental data, the constant could be related to the temperature at which the collector impurity concentration becomes equal to the intrinsic carrier concentration.

Original languageEnglish (US)
Pages (from-to)747-751
Number of pages5
JournalSolid State Electronics
Volume14
Issue number8
DOIs
StatePublished - 1971
Externally publishedYes

Fingerprint

p-n junctions
Time delay
Transistors
breakdown
Doping (additives)
accumulators
Silicon
Carrier concentration
transistors
time lag
Impurities
impurities
Temperature
silicon
curves
temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Doping dependence of second breakdown in a p-n junction. / Chen, H. C.; Portnoy, W. M.; Ferry, D. K.

In: Solid State Electronics, Vol. 14, No. 8, 1971, p. 747-751.

Research output: Contribution to journalArticle

Chen, H. C. ; Portnoy, W. M. ; Ferry, D. K. / Doping dependence of second breakdown in a p-n junction. In: Solid State Electronics. 1971 ; Vol. 14, No. 8. pp. 747-751.
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