Doped surfaces in one sun, point-contact solar cells

R. R. King, R. A. Sinton, R. M. Swanson

Research output: Contribution to journalArticle

29 Scopus citations

Abstract

This letter reports two new types of large-area (>8.5 cm2), backside, point-contact solar cells with doped surfaces, designed for use in unconcentrated sunlight. One type was fabricated on an intrinsic substrate with an optimized phosphorus diffusion on the sunward surface. The apertured-area efficiency was independently measured to be 22.3% at 1 sun (0.100 W/cm 2), 25°C, the highest reported for a silicon solar cell. The other type is constructed on a doped substrate, and has an apertured-area efficiency of 20.9%, the highest reported for a point-contact solar cell with a base in low-level injection. Both cells have record open-circuit voltages above 700 mV.

Original languageEnglish (US)
Pages (from-to)1460-1462
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number15
DOIs
StatePublished - Dec 1 1989
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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