Doped surfaces in one sun, point-contact solar cells

Richard King, R. A. Sinton, R. M. Swanson

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

This letter reports two new types of large-area (>8.5 cm2), backside, point-contact solar cells with doped surfaces, designed for use in unconcentrated sunlight. One type was fabricated on an intrinsic substrate with an optimized phosphorus diffusion on the sunward surface. The apertured-area efficiency was independently measured to be 22.3% at 1 sun (0.100 W/cm 2), 25°C, the highest reported for a silicon solar cell. The other type is constructed on a doped substrate, and has an apertured-area efficiency of 20.9%, the highest reported for a point-contact solar cell with a base in low-level injection. Both cells have record open-circuit voltages above 700 mV.

Original languageEnglish (US)
Pages (from-to)1460-1462
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number15
DOIs
StatePublished - 1989
Externally publishedYes

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sun
solar cells
sunlight
open circuit voltage
phosphorus
injection
cells

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Doped surfaces in one sun, point-contact solar cells. / King, Richard; Sinton, R. A.; Swanson, R. M.

In: Applied Physics Letters, Vol. 54, No. 15, 1989, p. 1460-1462.

Research output: Contribution to journalArticle

King, Richard ; Sinton, R. A. ; Swanson, R. M. / Doped surfaces in one sun, point-contact solar cells. In: Applied Physics Letters. 1989 ; Vol. 54, No. 15. pp. 1460-1462.
@article{a569ae4ff0b54984a5d960a055a9605f,
title = "Doped surfaces in one sun, point-contact solar cells",
abstract = "This letter reports two new types of large-area (>8.5 cm2), backside, point-contact solar cells with doped surfaces, designed for use in unconcentrated sunlight. One type was fabricated on an intrinsic substrate with an optimized phosphorus diffusion on the sunward surface. The apertured-area efficiency was independently measured to be 22.3{\%} at 1 sun (0.100 W/cm 2), 25°C, the highest reported for a silicon solar cell. The other type is constructed on a doped substrate, and has an apertured-area efficiency of 20.9{\%}, the highest reported for a point-contact solar cell with a base in low-level injection. Both cells have record open-circuit voltages above 700 mV.",
author = "Richard King and Sinton, {R. A.} and Swanson, {R. M.}",
year = "1989",
doi = "10.1063/1.101345",
language = "English (US)",
volume = "54",
pages = "1460--1462",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "15",

}

TY - JOUR

T1 - Doped surfaces in one sun, point-contact solar cells

AU - King, Richard

AU - Sinton, R. A.

AU - Swanson, R. M.

PY - 1989

Y1 - 1989

N2 - This letter reports two new types of large-area (>8.5 cm2), backside, point-contact solar cells with doped surfaces, designed for use in unconcentrated sunlight. One type was fabricated on an intrinsic substrate with an optimized phosphorus diffusion on the sunward surface. The apertured-area efficiency was independently measured to be 22.3% at 1 sun (0.100 W/cm 2), 25°C, the highest reported for a silicon solar cell. The other type is constructed on a doped substrate, and has an apertured-area efficiency of 20.9%, the highest reported for a point-contact solar cell with a base in low-level injection. Both cells have record open-circuit voltages above 700 mV.

AB - This letter reports two new types of large-area (>8.5 cm2), backside, point-contact solar cells with doped surfaces, designed for use in unconcentrated sunlight. One type was fabricated on an intrinsic substrate with an optimized phosphorus diffusion on the sunward surface. The apertured-area efficiency was independently measured to be 22.3% at 1 sun (0.100 W/cm 2), 25°C, the highest reported for a silicon solar cell. The other type is constructed on a doped substrate, and has an apertured-area efficiency of 20.9%, the highest reported for a point-contact solar cell with a base in low-level injection. Both cells have record open-circuit voltages above 700 mV.

UR - http://www.scopus.com/inward/record.url?scp=0043137298&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0043137298&partnerID=8YFLogxK

U2 - 10.1063/1.101345

DO - 10.1063/1.101345

M3 - Article

AN - SCOPUS:0043137298

VL - 54

SP - 1460

EP - 1462

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

ER -