Dopant profiling in p-i-n GaN structures using secondary electrons

Shanthan R. Alugubelli, Houqiang Fu, Kai Fu, Hanxiao Liu, Yuji Zhao, Fernando Ponce

Research output: Contribution to journalArticle

Abstract

We show that secondary electrons in a scanning electron microscope can provide important information about spatial dopant distribution in p-i-n GaN structures, with the highest contrast observed for a primary electron beam accelerating voltage in the range of 1 to 2 kV. The current through the specimen is used to determine the total backscattered and secondary electron yield. We establish a correlation between the secondary electron emission intensity and the doping characteristics of the material. The secondary electron emission intensity was found to be highest for p-type GaN, intermediate for n-type GaN, and lowest for undoped GaN. Specimen currents are found to have a strong correlation with the Mg concentration in p-GaN films. The contrast associated with dopants is shown to depend on experimental parameters such as primary electron beam voltage, total electron beam exposure, and specimen surface history. This technique can serve as a powerful tool for the development and characterization of thin films for GaN power electronics.

Original languageEnglish (US)
Article number015704
JournalJournal of Applied Physics
Volume126
Issue number1
DOIs
StatePublished - Jul 7 2019

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secondary emission
electron beams
electron emission
electrons
electric potential
spatial distribution
electron microscopes
histories
scanning
thin films
electronics

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Dopant profiling in p-i-n GaN structures using secondary electrons. / Alugubelli, Shanthan R.; Fu, Houqiang; Fu, Kai; Liu, Hanxiao; Zhao, Yuji; Ponce, Fernando.

In: Journal of Applied Physics, Vol. 126, No. 1, 015704, 07.07.2019.

Research output: Contribution to journalArticle

Alugubelli, Shanthan R. ; Fu, Houqiang ; Fu, Kai ; Liu, Hanxiao ; Zhao, Yuji ; Ponce, Fernando. / Dopant profiling in p-i-n GaN structures using secondary electrons. In: Journal of Applied Physics. 2019 ; Vol. 126, No. 1.
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