Dopant compensation mechanism and leakage current in Pb(Zr0.52, Ti0.48)O3 thin films

C. K. Barlingay, Sandwip Dey

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Abstract

The dopant compensation mechanism in 2-5 mol.% niobium (Nb)-doped Pb(Zr0.52, Ti0.48)O3 (PZT) thin films was studied to obtain single phase compositions, Transmission electron microscopy showed that the Nb-doped composition batched according to the Ti vacancy model, was single phase. This indicated that niobium donors were compensated by titanium vacancies at the B site. The beneficial effect of donors in single phase composition and detrimental effects of grain boundary second phases and acceptors on the leakage currents are reported, The single-phase Nb-doped (5%) PZT thin film exhibited a low leakage current of 1×10-7 A cm-2 at 1.2 MV cm-1.

Original languageEnglish (US)
Pages (from-to)112-115
Number of pages4
JournalThin Solid Films
Volume272
Issue number1
DOIs
StatePublished - Jan 1 1996

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Keywords

  • Niobium
  • Titanium
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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