Abstract
It is important for nanoscale transistors to have abrupt junctions, which are difficult to achieve via high-temperature anneals of implanted semiconductor layers due to undesired dopant diffusion. The use of a single-frequency microwave cavity applicator, along with a SiC-Alumina susceptor/assistor, is suggested as an alternative postimplantation process. Secondary ion mass spectroscopy analysis of microwave-annealed As-implanted Si samples show minimal diffusion, compared to rapid thermal annealed samples. Cross-sectional transmission electron microscopy and Raman spectroscopy confirm damage repair and Si recrystallization upon low-temperature microwave annealing (up to 650 °C). Ion channeling and sheet resistance measurements validate dopant relocation and activation. The susceptor is used to provide surface heating to the high-atomic-number Z implanted sample to enable it to absorb microwaves and thereby recrystallize through volumetric heating.
Original language | English (US) |
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Article number | 5910355 |
Pages (from-to) | 1122-1124 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 32 |
Issue number | 8 |
DOIs | |
State | Published - Aug 2011 |
Keywords
- Microwave annealing
- solid-phase epitaxial growth (SPEG)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering