Abstract

It is important for nanoscale transistors to have abrupt junctions, which are difficult to achieve via high-temperature anneals of implanted semiconductor layers due to undesired dopant diffusion. The use of a single-frequency microwave cavity applicator, along with a SiC-Alumina susceptor/assistor, is suggested as an alternative postimplantation process. Secondary ion mass spectroscopy analysis of microwave-annealed As-implanted Si samples show minimal diffusion, compared to rapid thermal annealed samples. Cross-sectional transmission electron microscopy and Raman spectroscopy confirm damage repair and Si recrystallization upon low-temperature microwave annealing (up to 650 °C). Ion channeling and sheet resistance measurements validate dopant relocation and activation. The susceptor is used to provide surface heating to the high-atomic-number Z implanted sample to enable it to absorb microwaves and thereby recrystallize through volumetric heating.

Original languageEnglish (US)
Article number5910355
Pages (from-to)1122-1124
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number8
DOIs
StatePublished - Aug 2011

Fingerprint

Arsenic
Chemical activation
Microwaves
Doping (additives)
Ions
Heating
Applicators
Relocation
Aluminum Oxide
Sheet resistance
Microwave frequencies
Temperature
Raman spectroscopy
Transistors
Repair
Alumina
Spectroscopy
Annealing
Semiconductor materials
Transmission electron microscopy

Keywords

  • Microwave annealing
  • solid-phase epitaxial growth (SPEG)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Dopant activation in arsenic-implanted Si by susceptor-assisted low-temperature microwave anneal. / Vemuri, Rajitha N P; Gadre, Mandar J.; Theodore, N. D.; Alford, Terry.

In: IEEE Electron Device Letters, Vol. 32, No. 8, 5910355, 08.2011, p. 1122-1124.

Research output: Contribution to journalArticle

Vemuri, Rajitha N P ; Gadre, Mandar J. ; Theodore, N. D. ; Alford, Terry. / Dopant activation in arsenic-implanted Si by susceptor-assisted low-temperature microwave anneal. In: IEEE Electron Device Letters. 2011 ; Vol. 32, No. 8. pp. 1122-1124.
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