Donor-related cathodoluminescence of p-AlGaN electron blocking layer embedded in ultraviolet laser diode structure

Rui Li, Jingming Zhang, Li Chen, Huabo Zhao, Ziwen Yang, Tao Yu, Ding Li, Zhicheng Liu, Weihua Chen, Zhijian Yang, Guoyi Zhang, Zizhao Gan, Xiaodong Hu, Qiyuan Wei, Ti Li, Fernando Ponce

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Donor-related cathodoluminescence of p -Al0.11 Ga0.89 N electron blocking layer (EBL) embedded in a laser structure was investigated by low-energy e-beam scanning along the ridge of a vertical taper both at 82 and 300 K. When e-beam probed the close vicinity of multiquantum well from p -side, an emission at 3.313 eV only appeared at 82 K and represented a prominent increase in intensity with a blueshift up to 23 meV. Besides, its intensity exhibited a linear dependence on quantum well (QW) emission intensity at low QW excitation and a sublinear dependence at high QW excitation. Combined with the annealing behaviors of the emission at elevated temperatures, these results were ascribed to the EBL capture of the holes tunneling from neighboring QW under built-in junction field and the subsequent donor-acceptor pairs transition involving a donor level of 116 meV below conduction band, which was presumably related to nitrogen vacancy (VN).

Original languageEnglish (US)
Article number211103
JournalApplied Physics Letters
Volume94
Issue number21
DOIs
StatePublished - 2009

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cathodoluminescence
ultraviolet lasers
semiconductor lasers
quantum wells
electrons
N electrons
tapering
excitation
ridges
conduction bands
nitrogen
annealing
scanning
lasers
temperature
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Donor-related cathodoluminescence of p-AlGaN electron blocking layer embedded in ultraviolet laser diode structure. / Li, Rui; Zhang, Jingming; Chen, Li; Zhao, Huabo; Yang, Ziwen; Yu, Tao; Li, Ding; Liu, Zhicheng; Chen, Weihua; Yang, Zhijian; Zhang, Guoyi; Gan, Zizhao; Hu, Xiaodong; Wei, Qiyuan; Li, Ti; Ponce, Fernando.

In: Applied Physics Letters, Vol. 94, No. 21, 211103, 2009.

Research output: Contribution to journalArticle

Li, R, Zhang, J, Chen, L, Zhao, H, Yang, Z, Yu, T, Li, D, Liu, Z, Chen, W, Yang, Z, Zhang, G, Gan, Z, Hu, X, Wei, Q, Li, T & Ponce, F 2009, 'Donor-related cathodoluminescence of p-AlGaN electron blocking layer embedded in ultraviolet laser diode structure', Applied Physics Letters, vol. 94, no. 21, 211103. https://doi.org/10.1063/1.3143606
Li, Rui ; Zhang, Jingming ; Chen, Li ; Zhao, Huabo ; Yang, Ziwen ; Yu, Tao ; Li, Ding ; Liu, Zhicheng ; Chen, Weihua ; Yang, Zhijian ; Zhang, Guoyi ; Gan, Zizhao ; Hu, Xiaodong ; Wei, Qiyuan ; Li, Ti ; Ponce, Fernando. / Donor-related cathodoluminescence of p-AlGaN electron blocking layer embedded in ultraviolet laser diode structure. In: Applied Physics Letters. 2009 ; Vol. 94, No. 21.
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abstract = "Donor-related cathodoluminescence of p -Al0.11 Ga0.89 N electron blocking layer (EBL) embedded in a laser structure was investigated by low-energy e-beam scanning along the ridge of a vertical taper both at 82 and 300 K. When e-beam probed the close vicinity of multiquantum well from p -side, an emission at 3.313 eV only appeared at 82 K and represented a prominent increase in intensity with a blueshift up to 23 meV. Besides, its intensity exhibited a linear dependence on quantum well (QW) emission intensity at low QW excitation and a sublinear dependence at high QW excitation. Combined with the annealing behaviors of the emission at elevated temperatures, these results were ascribed to the EBL capture of the holes tunneling from neighboring QW under built-in junction field and the subsequent donor-acceptor pairs transition involving a donor level of 116 meV below conduction band, which was presumably related to nitrogen vacancy (VN).",
author = "Rui Li and Jingming Zhang and Li Chen and Huabo Zhao and Ziwen Yang and Tao Yu and Ding Li and Zhicheng Liu and Weihua Chen and Zhijian Yang and Guoyi Zhang and Zizhao Gan and Xiaodong Hu and Qiyuan Wei and Ti Li and Fernando Ponce",
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AU - Li, Rui

AU - Zhang, Jingming

AU - Chen, Li

AU - Zhao, Huabo

AU - Yang, Ziwen

AU - Yu, Tao

AU - Li, Ding

AU - Liu, Zhicheng

AU - Chen, Weihua

AU - Yang, Zhijian

AU - Zhang, Guoyi

AU - Gan, Zizhao

AU - Hu, Xiaodong

AU - Wei, Qiyuan

AU - Li, Ti

AU - Ponce, Fernando

PY - 2009

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AB - Donor-related cathodoluminescence of p -Al0.11 Ga0.89 N electron blocking layer (EBL) embedded in a laser structure was investigated by low-energy e-beam scanning along the ridge of a vertical taper both at 82 and 300 K. When e-beam probed the close vicinity of multiquantum well from p -side, an emission at 3.313 eV only appeared at 82 K and represented a prominent increase in intensity with a blueshift up to 23 meV. Besides, its intensity exhibited a linear dependence on quantum well (QW) emission intensity at low QW excitation and a sublinear dependence at high QW excitation. Combined with the annealing behaviors of the emission at elevated temperatures, these results were ascribed to the EBL capture of the holes tunneling from neighboring QW under built-in junction field and the subsequent donor-acceptor pairs transition involving a donor level of 116 meV below conduction band, which was presumably related to nitrogen vacancy (VN).

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