Do ballistic channels contribute to the magnetoresistance in magnetic tunnel junctions?

E. P. Price, David Smith, R. C. Dynes, A. E. Berkowitz

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The barrier quality and conduction mechanisms in ferromagnet-insulator- ferromagnet (FIF) junctions are studied by fabricating adjacent ferromagnet-insulator-superconductor (FIS) junctions, using the same barrier and top electrode in both junctions. Transport measurements on the FIS junctions provide information about the transport processes in the FIF junctions. The FIS junctions have a large zero-bias conductance (ZBC) that varies with barrier thickness, in part due to ballistic channels in parallel with the tunnel barrier. As the ZBC increases, the magnetoresistance (MR) in the FIF junctions decreases, implying that these ballistic channels are not magnetoresistive and that their presence reduces the total MR in the FIF junctions.

Original languageEnglish (US)
Pages (from-to)285-287
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number2
DOIs
StatePublished - Jan 14 2002

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tunnel junctions
ballistics
insulators
tunnels
conduction
electrodes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Do ballistic channels contribute to the magnetoresistance in magnetic tunnel junctions? / Price, E. P.; Smith, David; Dynes, R. C.; Berkowitz, A. E.

In: Applied Physics Letters, Vol. 80, No. 2, 14.01.2002, p. 285-287.

Research output: Contribution to journalArticle

Price, E. P. ; Smith, David ; Dynes, R. C. ; Berkowitz, A. E. / Do ballistic channels contribute to the magnetoresistance in magnetic tunnel junctions?. In: Applied Physics Letters. 2002 ; Vol. 80, No. 2. pp. 285-287.
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