Disturbance characteristics of half-selected cells in a cross-point resistive switching memory array

Zhe Chen, Haitong Li, Hong Yu Chen, Bing Chen, Rui Liu, Peng Huang, Feifei Zhang, Zizhen Jiang, Hongfei Ye, Gao Bin Gao, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang, H. S Philip Wong, Shimeng Yu

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