Disturbance characteristics of half-selected cells in a cross-point resistive switching memory array

Zhe Chen, Haitong Li, Hong Yu Chen, Bing Chen, Rui Liu, Peng Huang, Feifei Zhang, Zizhen Jiang, Hongfei Ye, Gao Bin Gao, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang, H. S Philip Wong, Shimeng Yu

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Disturbance characteristics of cross-point resistive random access memory (RRAM) arrays are comprehensively studied in this paper. An analytical model is developed to quantify the number of pulses (#Pulse) the cell can bear before disturbance occurs under various sub-switching voltage stresses based on physical understanding. An evaluation methodology is proposed to assess the disturb behavior of half-selected (HS) cells in cross-point RRAM arrays by combining the analytical model and SPICE simulation. The characteristics of cross-point RRAM arrays such as energy consumption, reliable operating cycles and total error bits are evaluated by the methodology. A possible solution to mitigate disturbance is proposed.

Original languageEnglish (US)
Article number215204
JournalNanotechnology
Volume27
Issue number21
DOIs
StatePublished - Apr 20 2016

Keywords

  • cross-point array
  • half-selected (HS) cells
  • resistance disturbance
  • resistive random access memory (RRAM)
  • SPICE simulation

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

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    Chen, Z., Li, H., Chen, H. Y., Chen, B., Liu, R., Huang, P., Zhang, F., Jiang, Z., Ye, H., Bin Gao, G., Liu, L., Liu, X., Kang, J., Wong, H. S. P., & Yu, S. (2016). Disturbance characteristics of half-selected cells in a cross-point resistive switching memory array. Nanotechnology, 27(21), [215204]. https://doi.org/10.1088/0957-4484/27/21/215204