Disturbance characteristics of half-selected cells in a cross-point resistive switching memory array

Zhe Chen; Haitong Li; Hong Yu Chen; Bing Chen; Rui Liu; Peng Huang; Feifei Zhang; Zizhen Jiang; Hongfei Ye; Gao Bin Gao; Lifeng Liu; Xiaoyan Liu; Jinfeng Kang; H. S Philip Wong; Shimeng Yu

doi:10.1088/0957-4484/27/21/215204

Disturbance characteristics of half-selected cells in a cross-point resistive switching memory array

Zhe Chen, Haitong Li, Hong Yu Chen, Bing Chen, Rui Liu, Peng Huang, Feifei Zhang, Zizhen Jiang, Hongfei Ye, Gao Bin Gao, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang, H. S Philip Wong, Shimeng Yu

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Disturbance characteristics of cross-point resistive random access memory (RRAM) arrays are comprehensively studied in this paper. An analytical model is developed to quantify the number of pulses (#Pulse) the cell can bear before disturbance occurs under various sub-switching voltage stresses based on physical understanding. An evaluation methodology is proposed to assess the disturb behavior of half-selected (HS) cells in cross-point RRAM arrays by combining the analytical model and SPICE simulation. The characteristics of cross-point RRAM arrays such as energy consumption, reliable operating cycles and total error bits are evaluated by the methodology. A possible solution to mitigate disturbance is proposed.

Original language	English (US)
Article number	215204
Journal	Nanotechnology
Volume	27
Issue number	21
DOIs	https://doi.org/10.1088/0957-4484/27/21/215204
State	Published - Apr 20 2016

Keywords

SPICE simulation
cross-point array
half-selected (HS) cells
resistance disturbance
resistive random access memory (RRAM)

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/27/21/215204

Cite this

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title = "Disturbance characteristics of half-selected cells in a cross-point resistive switching memory array",

abstract = "Disturbance characteristics of cross-point resistive random access memory (RRAM) arrays are comprehensively studied in this paper. An analytical model is developed to quantify the number of pulses (#Pulse) the cell can bear before disturbance occurs under various sub-switching voltage stresses based on physical understanding. An evaluation methodology is proposed to assess the disturb behavior of half-selected (HS) cells in cross-point RRAM arrays by combining the analytical model and SPICE simulation. The characteristics of cross-point RRAM arrays such as energy consumption, reliable operating cycles and total error bits are evaluated by the methodology. A possible solution to mitigate disturbance is proposed.",

keywords = "SPICE simulation, cross-point array, half-selected (HS) cells, resistance disturbance, resistive random access memory (RRAM)",

author = "Zhe Chen and Haitong Li and Chen, {Hong Yu} and Bing Chen and Rui Liu and Peng Huang and Feifei Zhang and Zizhen Jiang and Hongfei Ye and {Bin Gao}, Gao and Lifeng Liu and Xiaoyan Liu and Jinfeng Kang and Wong, {H. S Philip} and Shimeng Yu",

note = "Funding Information: This work is supported in part by NSFC (61421005, 61334007), Beijing Municipal Science and Technology Plan Projects, as well as supported in part by the member companies of the Stanford Non-Volatile Memory Technology Research Initiative (NMTRI) affiliate program, and Systems on Nanoscale Information Fabrics (SONIC) Center, one of six centers of Semiconductor Technology Advanced Research Network (STARnet), a Semiconductor Research Corporation (SRC) program sponsored by Microelectronics Advanced Research Corporation (MARCO) and Defense Advanced Research Projects Agency (DARPA), and the NCN-NEEDS program, which is funded by the National Science Foundation, contract 1227020-EEC, and by the Semiconductor Research Corporation. Publisher Copyright: {\textcopyright} 2016 IOP Publishing Ltd.",

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doi = "10.1088/0957-4484/27/21/215204",

language = "English (US)",

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journal = "Nanotechnology",

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AU - Chen, Zhe

AU - Li, Haitong

AU - Chen, Hong Yu

AU - Chen, Bing

AU - Liu, Rui

AU - Huang, Peng

AU - Zhang, Feifei

AU - Jiang, Zizhen

AU - Ye, Hongfei

AU - Bin Gao, Gao

AU - Liu, Lifeng

AU - Liu, Xiaoyan

AU - Kang, Jinfeng

AU - Wong, H. S Philip

AU - Yu, Shimeng

N1 - Funding Information: This work is supported in part by NSFC (61421005, 61334007), Beijing Municipal Science and Technology Plan Projects, as well as supported in part by the member companies of the Stanford Non-Volatile Memory Technology Research Initiative (NMTRI) affiliate program, and Systems on Nanoscale Information Fabrics (SONIC) Center, one of six centers of Semiconductor Technology Advanced Research Network (STARnet), a Semiconductor Research Corporation (SRC) program sponsored by Microelectronics Advanced Research Corporation (MARCO) and Defense Advanced Research Projects Agency (DARPA), and the NCN-NEEDS program, which is funded by the National Science Foundation, contract 1227020-EEC, and by the Semiconductor Research Corporation. Publisher Copyright: © 2016 IOP Publishing Ltd.

PY - 2016/4/20

Y1 - 2016/4/20

N2 - Disturbance characteristics of cross-point resistive random access memory (RRAM) arrays are comprehensively studied in this paper. An analytical model is developed to quantify the number of pulses (#Pulse) the cell can bear before disturbance occurs under various sub-switching voltage stresses based on physical understanding. An evaluation methodology is proposed to assess the disturb behavior of half-selected (HS) cells in cross-point RRAM arrays by combining the analytical model and SPICE simulation. The characteristics of cross-point RRAM arrays such as energy consumption, reliable operating cycles and total error bits are evaluated by the methodology. A possible solution to mitigate disturbance is proposed.

AB - Disturbance characteristics of cross-point resistive random access memory (RRAM) arrays are comprehensively studied in this paper. An analytical model is developed to quantify the number of pulses (#Pulse) the cell can bear before disturbance occurs under various sub-switching voltage stresses based on physical understanding. An evaluation methodology is proposed to assess the disturb behavior of half-selected (HS) cells in cross-point RRAM arrays by combining the analytical model and SPICE simulation. The characteristics of cross-point RRAM arrays such as energy consumption, reliable operating cycles and total error bits are evaluated by the methodology. A possible solution to mitigate disturbance is proposed.

KW - SPICE simulation

KW - cross-point array

KW - half-selected (HS) cells

KW - resistance disturbance

KW - resistive random access memory (RRAM)

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Disturbance characteristics of half-selected cells in a cross-point resistive switching memory array

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