DISTINGUISHING DISSOCIATED GLIDE AND SHUFFLE SET DISLOCATIONS BY HIGH RESOLUTION ELECTRON MICROSCOPY.

A. Olsen, John Spence

Research output: Contribution to journalArticle

94 Citations (Scopus)

Abstract

High resolution electron lattice images of an end-on, dissociated 60 degree dislocation in silicon have been used to determine the type (shuffle or glide) of dislocation present. Characteristic features of 30 degree partial core image which depend on detail beyond the instrumental point resolution have been used together with computer-simulated dynamical electron images. The use of defect symmetry is proposed as a method of resolving the black-white contrast ambiguity between tunnels and atoms.

Original languageEnglish (US)
Pages (from-to)945-965
Number of pages21
JournalPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Volume43
Issue number4
StatePublished - Apr 1981

Fingerprint

High resolution electron microscopy
electron microscopy
Electrons
high resolution
Silicon
Tunnels
Atoms
ambiguity
Defects
tunnels
electrons
defects
symmetry
silicon
atoms
hydroquinone

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

Cite this

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abstract = "High resolution electron lattice images of an end-on, dissociated 60 degree dislocation in silicon have been used to determine the type (shuffle or glide) of dislocation present. Characteristic features of 30 degree partial core image which depend on detail beyond the instrumental point resolution have been used together with computer-simulated dynamical electron images. The use of defect symmetry is proposed as a method of resolving the black-white contrast ambiguity between tunnels and atoms.",
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N2 - High resolution electron lattice images of an end-on, dissociated 60 degree dislocation in silicon have been used to determine the type (shuffle or glide) of dislocation present. Characteristic features of 30 degree partial core image which depend on detail beyond the instrumental point resolution have been used together with computer-simulated dynamical electron images. The use of defect symmetry is proposed as a method of resolving the black-white contrast ambiguity between tunnels and atoms.

AB - High resolution electron lattice images of an end-on, dissociated 60 degree dislocation in silicon have been used to determine the type (shuffle or glide) of dislocation present. Characteristic features of 30 degree partial core image which depend on detail beyond the instrumental point resolution have been used together with computer-simulated dynamical electron images. The use of defect symmetry is proposed as a method of resolving the black-white contrast ambiguity between tunnels and atoms.

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