Distinguishing dissociated glide and shuffle set dislocations by high resolution electron microscopy

A. Olsen, John Spence

Research output: Contribution to journalArticle

95 Scopus citations

Abstract

High resolution electron lattice images of an end-on, dissociated 60° dislocation in silicon have been used to determine the type (shuffle or glide) of dislocation present. Characteristic features of the 30° partial core image which depend on detail beyond the instrumental point resolution have been used together with computer-simulated dynamical electron images. The use of defect symmetry is proposed as a method of resolving the black-white contrast ambiguity between tunnels and atoms.

Original languageEnglish (US)
Pages (from-to)945-965
Number of pages21
JournalPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Volume43
Issue number4
DOIs
StatePublished - Apr 1981

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)
  • Metals and Alloys

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