Distinguishing dissociated glide and shuffle set dislocations by high resolution electron microscopy

A. Olsen; John Spence

doi:10.1080/01418618108239504

Distinguishing dissociated glide and shuffle set dislocations by high resolution electron microscopy

A. Olsen, John Spence

Research output: Contribution to journal › Article › peer-review

98 Scopus citations

Abstract

High resolution electron lattice images of an end-on, dissociated 60° dislocation in silicon have been used to determine the type (shuffle or glide) of dislocation present. Characteristic features of the 30° partial core image which depend on detail beyond the instrumental point resolution have been used together with computer-simulated dynamical electron images. The use of defect symmetry is proposed as a method of resolving the black-white contrast ambiguity between tunnels and atoms.

Original language	English (US)
Pages (from-to)	945-965
Number of pages	21
Journal	Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Volume	43
Issue number	4
DOIs	https://doi.org/10.1080/01418618108239504
State	Published - Apr 1981

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Materials Science
Condensed Matter Physics
Physics and Astronomy (miscellaneous)
Metals and Alloys

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10.1080/01418618108239504

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title = "Distinguishing dissociated glide and shuffle set dislocations by high resolution electron microscopy",

abstract = "High resolution electron lattice images of an end-on, dissociated 60° dislocation in silicon have been used to determine the type (shuffle or glide) of dislocation present. Characteristic features of the 30° partial core image which depend on detail beyond the instrumental point resolution have been used together with computer-simulated dynamical electron images. The use of defect symmetry is proposed as a method of resolving the black-white contrast ambiguity between tunnels and atoms.",

author = "A. Olsen and John Spence",

note = "Funding Information: ACKNOWLEDGMENT The authors acknowledge the support of NSF grant number DMR8002108.",

year = "1981",

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T1 - Distinguishing dissociated glide and shuffle set dislocations by high resolution electron microscopy

AU - Olsen, A.

AU - Spence, John

N1 - Funding Information: ACKNOWLEDGMENT The authors acknowledge the support of NSF grant number DMR8002108.

PY - 1981/4

Y1 - 1981/4

N2 - High resolution electron lattice images of an end-on, dissociated 60° dislocation in silicon have been used to determine the type (shuffle or glide) of dislocation present. Characteristic features of the 30° partial core image which depend on detail beyond the instrumental point resolution have been used together with computer-simulated dynamical electron images. The use of defect symmetry is proposed as a method of resolving the black-white contrast ambiguity between tunnels and atoms.

AB - High resolution electron lattice images of an end-on, dissociated 60° dislocation in silicon have been used to determine the type (shuffle or glide) of dislocation present. Characteristic features of the 30° partial core image which depend on detail beyond the instrumental point resolution have been used together with computer-simulated dynamical electron images. The use of defect symmetry is proposed as a method of resolving the black-white contrast ambiguity between tunnels and atoms.

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IS - 4

ER -

Distinguishing dissociated glide and shuffle set dislocations by high resolution electron microscopy

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