Abstract

Bipolar junction transistors (BJTs) with relatively large feature sizes, typical of older technologies and high-voltage devices, are susceptible to recombination in the neutral base region when they are damaged by atomic displacement. This results in gain degradation, which, as originally described by Messenger and Spratt, can be modeled as an increase in the ratio of BJT base to collector current (1/β) when the device is exposed to high energy particles (e.g., neutrons). While this also occurs in smaller devices and in those intended for operation at lower voltages, recombination in the emitter-base depletion region typically dominates the radiation-induced gain degradation in these devices. This is a consequence of the recombination rate being highest in regions where the electron and hole concentrations are approximately equal. Recombination in the neutral base and emitter-base depletion region exhibit different dependences on applied voltage, base doping and neutral base width. These dependences result in inaccuracies in the standard Messenger-Spratt equation, even for devices with base widths as large as ∼10 μm. This paper presents a physics-based modification of the equation which provides a much better fit to experimental data, particularly at low voltages.

Original languageEnglish (US)
Article number7586134
JournalIEEE Transactions on Nuclear Science
VolumePP
Issue number99
DOIs
StatePublished - 2016

Fingerprint

junction transistors
Bipolar transistors
bipolar transistors
damage
Electric potential
low voltage
emitters
depletion
Degradation
Hole concentration
degradation
Neutrons
particle energy
Physics
accumulators
Doping (additives)
high voltages
Radiation
Electrons
neutrons

Keywords

  • Bipolar devices
  • defects
  • displacement damage
  • radiation modeling
  • recombination

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Displacement Damage in Bipolar Junction Transistors : Beyond Messenger-Spratt. / Barnaby, Hugh; Schrimpf, R. D.; Galloway, K. F.; Li, X.; Yang, J.; Liu, C.

In: IEEE Transactions on Nuclear Science, Vol. PP, No. 99, 7586134, 2016.

Research output: Contribution to journalArticle

Barnaby, Hugh ; Schrimpf, R. D. ; Galloway, K. F. ; Li, X. ; Yang, J. ; Liu, C. / Displacement Damage in Bipolar Junction Transistors : Beyond Messenger-Spratt. In: IEEE Transactions on Nuclear Science. 2016 ; Vol. PP, No. 99.
@article{db706c1c2c0e4427b362b79b27c0c97b,
title = "Displacement Damage in Bipolar Junction Transistors: Beyond Messenger-Spratt",
abstract = "Bipolar junction transistors (BJTs) with relatively large feature sizes, typical of older technologies and high-voltage devices, are susceptible to recombination in the neutral base region when they are damaged by atomic displacement. This results in gain degradation, which, as originally described by Messenger and Spratt, can be modeled as an increase in the ratio of BJT base to collector current (1/β) when the device is exposed to high energy particles (e.g., neutrons). While this also occurs in smaller devices and in those intended for operation at lower voltages, recombination in the emitter-base depletion region typically dominates the radiation-induced gain degradation in these devices. This is a consequence of the recombination rate being highest in regions where the electron and hole concentrations are approximately equal. Recombination in the neutral base and emitter-base depletion region exhibit different dependences on applied voltage, base doping and neutral base width. These dependences result in inaccuracies in the standard Messenger-Spratt equation, even for devices with base widths as large as ∼10 μm. This paper presents a physics-based modification of the equation which provides a much better fit to experimental data, particularly at low voltages.",
keywords = "Bipolar devices, defects, displacement damage, radiation modeling, recombination",
author = "Hugh Barnaby and Schrimpf, {R. D.} and Galloway, {K. F.} and X. Li and J. Yang and C. Liu",
year = "2016",
doi = "10.1109/TNS.2016.2615628",
language = "English (US)",
volume = "PP",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "99",

}

TY - JOUR

T1 - Displacement Damage in Bipolar Junction Transistors

T2 - Beyond Messenger-Spratt

AU - Barnaby, Hugh

AU - Schrimpf, R. D.

AU - Galloway, K. F.

AU - Li, X.

AU - Yang, J.

AU - Liu, C.

PY - 2016

Y1 - 2016

N2 - Bipolar junction transistors (BJTs) with relatively large feature sizes, typical of older technologies and high-voltage devices, are susceptible to recombination in the neutral base region when they are damaged by atomic displacement. This results in gain degradation, which, as originally described by Messenger and Spratt, can be modeled as an increase in the ratio of BJT base to collector current (1/β) when the device is exposed to high energy particles (e.g., neutrons). While this also occurs in smaller devices and in those intended for operation at lower voltages, recombination in the emitter-base depletion region typically dominates the radiation-induced gain degradation in these devices. This is a consequence of the recombination rate being highest in regions where the electron and hole concentrations are approximately equal. Recombination in the neutral base and emitter-base depletion region exhibit different dependences on applied voltage, base doping and neutral base width. These dependences result in inaccuracies in the standard Messenger-Spratt equation, even for devices with base widths as large as ∼10 μm. This paper presents a physics-based modification of the equation which provides a much better fit to experimental data, particularly at low voltages.

AB - Bipolar junction transistors (BJTs) with relatively large feature sizes, typical of older technologies and high-voltage devices, are susceptible to recombination in the neutral base region when they are damaged by atomic displacement. This results in gain degradation, which, as originally described by Messenger and Spratt, can be modeled as an increase in the ratio of BJT base to collector current (1/β) when the device is exposed to high energy particles (e.g., neutrons). While this also occurs in smaller devices and in those intended for operation at lower voltages, recombination in the emitter-base depletion region typically dominates the radiation-induced gain degradation in these devices. This is a consequence of the recombination rate being highest in regions where the electron and hole concentrations are approximately equal. Recombination in the neutral base and emitter-base depletion region exhibit different dependences on applied voltage, base doping and neutral base width. These dependences result in inaccuracies in the standard Messenger-Spratt equation, even for devices with base widths as large as ∼10 μm. This paper presents a physics-based modification of the equation which provides a much better fit to experimental data, particularly at low voltages.

KW - Bipolar devices

KW - defects

KW - displacement damage

KW - radiation modeling

KW - recombination

UR - http://www.scopus.com/inward/record.url?scp=85029204520&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85029204520&partnerID=8YFLogxK

U2 - 10.1109/TNS.2016.2615628

DO - 10.1109/TNS.2016.2615628

M3 - Article

AN - SCOPUS:85027525102

VL - PP

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 99

M1 - 7586134

ER -