Abstract
A full-wave finite element analysis is used to examine the dispersive effects of a thin metal-insulating layer in CPW and microstrip MMICs. This layer is often encountered in the MMIC manufacturing process residing on top of a semiconducting substrate. The effects of metallization thickness are also examined.
| Original language | English (US) |
|---|---|
| Title of host publication | IEEE MTT-S International Microwave Symposium Digest |
| Publisher | IEEE |
| Pages | 303-306 |
| Number of pages | 4 |
| Volume | 1 |
| State | Published - 1996 |
| Event | Proceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest. Part 1 (of 3) - San Franscisco, CA, USA Duration: Jun 17 1996 → Jun 21 1996 |
Other
| Other | Proceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest. Part 1 (of 3) |
|---|---|
| City | San Franscisco, CA, USA |
| Period | 6/17/96 → 6/21/96 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics