Dispersive effects of a thin metal-insulating layer in MMIC structures

Anastasis C. Polycarpou, Michael R. Lyons, Constantine Balanis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A full-wave finite element analysis is used to examine the dispersive effects of a thin metal-insulating layer in CPW and microstrip MMICs. This layer is often encountered in the MMIC manufacturing process residing on top of a semiconducting substrate. The effects of metallization thickness are also examined.

Original languageEnglish (US)
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
PublisherIEEE
Pages303-306
Number of pages4
Volume1
StatePublished - 1996
EventProceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest. Part 1 (of 3) - San Franscisco, CA, USA
Duration: Jun 17 1996Jun 21 1996

Other

OtherProceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest. Part 1 (of 3)
CitySan Franscisco, CA, USA
Period6/17/966/21/96

Fingerprint

Monolithic microwave integrated circuits
Metallizing
Metals
metals
manufacturing
Finite element method
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Polycarpou, A. C., Lyons, M. R., & Balanis, C. (1996). Dispersive effects of a thin metal-insulating layer in MMIC structures. In IEEE MTT-S International Microwave Symposium Digest (Vol. 1, pp. 303-306). IEEE.

Dispersive effects of a thin metal-insulating layer in MMIC structures. / Polycarpou, Anastasis C.; Lyons, Michael R.; Balanis, Constantine.

IEEE MTT-S International Microwave Symposium Digest. Vol. 1 IEEE, 1996. p. 303-306.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Polycarpou, AC, Lyons, MR & Balanis, C 1996, Dispersive effects of a thin metal-insulating layer in MMIC structures. in IEEE MTT-S International Microwave Symposium Digest. vol. 1, IEEE, pp. 303-306, Proceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest. Part 1 (of 3), San Franscisco, CA, USA, 6/17/96.
Polycarpou AC, Lyons MR, Balanis C. Dispersive effects of a thin metal-insulating layer in MMIC structures. In IEEE MTT-S International Microwave Symposium Digest. Vol. 1. IEEE. 1996. p. 303-306
Polycarpou, Anastasis C. ; Lyons, Michael R. ; Balanis, Constantine. / Dispersive effects of a thin metal-insulating layer in MMIC structures. IEEE MTT-S International Microwave Symposium Digest. Vol. 1 IEEE, 1996. pp. 303-306
@inproceedings{9ce9cd6467134dcba72553c25700df61,
title = "Dispersive effects of a thin metal-insulating layer in MMIC structures",
abstract = "A full-wave finite element analysis is used to examine the dispersive effects of a thin metal-insulating layer in CPW and microstrip MMICs. This layer is often encountered in the MMIC manufacturing process residing on top of a semiconducting substrate. The effects of metallization thickness are also examined.",
author = "Polycarpou, {Anastasis C.} and Lyons, {Michael R.} and Constantine Balanis",
year = "1996",
language = "English (US)",
volume = "1",
pages = "303--306",
booktitle = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "IEEE",

}

TY - GEN

T1 - Dispersive effects of a thin metal-insulating layer in MMIC structures

AU - Polycarpou, Anastasis C.

AU - Lyons, Michael R.

AU - Balanis, Constantine

PY - 1996

Y1 - 1996

N2 - A full-wave finite element analysis is used to examine the dispersive effects of a thin metal-insulating layer in CPW and microstrip MMICs. This layer is often encountered in the MMIC manufacturing process residing on top of a semiconducting substrate. The effects of metallization thickness are also examined.

AB - A full-wave finite element analysis is used to examine the dispersive effects of a thin metal-insulating layer in CPW and microstrip MMICs. This layer is often encountered in the MMIC manufacturing process residing on top of a semiconducting substrate. The effects of metallization thickness are also examined.

UR - http://www.scopus.com/inward/record.url?scp=0029702067&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029702067&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0029702067

VL - 1

SP - 303

EP - 306

BT - IEEE MTT-S International Microwave Symposium Digest

PB - IEEE

ER -