Dispersive effects of a thin metal-insulating layer in MMIC structures

Anastasis C. Polycarpou, Michael R. Lyons, Constantine Balanis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A full-wave finite element analysis is used to examine the dispersive effects of a thin metal-insulating layer in CPW and microstrip MMICs. This layer is often encountered in the MMIC manufacturing process residing on top of a semiconducting substrate. The effects of metallization thickness are also examined.

Original languageEnglish (US)
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
PublisherIEEE
Pages303-306
Number of pages4
Volume1
Publication statusPublished - 1996
EventProceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest. Part 1 (of 3) - San Franscisco, CA, USA
Duration: Jun 17 1996Jun 21 1996

Other

OtherProceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest. Part 1 (of 3)
CitySan Franscisco, CA, USA
Period6/17/966/21/96

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Polycarpou, A. C., Lyons, M. R., & Balanis, C. (1996). Dispersive effects of a thin metal-insulating layer in MMIC structures. In IEEE MTT-S International Microwave Symposium Digest (Vol. 1, pp. 303-306). IEEE.