Abstract

The characteristic emission from tail states below the bandgap of GaAsBi/GaAs quantum wells is studied using photoluminescence spectroscopy over a 10-300 K temperature range and a 0.1-1000 mW pump power range. The tail states exhibit two characteristic energies: A deeper one that is temperature independent at 29 meV and one nearer to bandgap that is temperature dependent, broadening from 17 meV at 10 K-29 meV at room temperature. The tail states are thought to originate from localization of the Bi states and disorder effects due to alloy fluctuations and clustering on the group-V sublattice.

Original languageEnglish (US)
Article number041110
JournalApplied Physics Letters
Volume103
Issue number4
DOIs
StatePublished - Jul 22 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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