Abstract

The characteristic emission from tail states below the bandgap of GaAsBi/GaAs quantum wells is studied using photoluminescence spectroscopy over a 10-300 K temperature range and a 0.1-1000 mW pump power range. The tail states exhibit two characteristic energies: A deeper one that is temperature independent at 29 meV and one nearer to bandgap that is temperature dependent, broadening from 17 meV at 10 K-29 meV at room temperature. The tail states are thought to originate from localization of the Bi states and disorder effects due to alloy fluctuations and clustering on the group-V sublattice.

Original languageEnglish (US)
Article number041110
JournalApplied Physics Letters
Volume103
Issue number4
DOIs
StatePublished - Jul 22 2013

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disorders
sublattices
temperature
quantum wells
pumps
photoluminescence
room temperature
spectroscopy
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Disorder and the Urbach edge in dilute bismide GaAsBi. / Gogineni, Chaturvedi; Riordan, Nathaniel A.; Johnson, Shane; Lu, Xianfeng; Tiedje, Tom.

In: Applied Physics Letters, Vol. 103, No. 4, 041110, 22.07.2013.

Research output: Contribution to journalArticle

Gogineni, C, Riordan, NA, Johnson, S, Lu, X & Tiedje, T 2013, 'Disorder and the Urbach edge in dilute bismide GaAsBi', Applied Physics Letters, vol. 103, no. 4, 041110. https://doi.org/10.1063/1.4816435
Gogineni, Chaturvedi ; Riordan, Nathaniel A. ; Johnson, Shane ; Lu, Xianfeng ; Tiedje, Tom. / Disorder and the Urbach edge in dilute bismide GaAsBi. In: Applied Physics Letters. 2013 ; Vol. 103, No. 4.
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