Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy

Y. Fu, F. Yun, Y. T. Moon, Ü Özgür, J. Q. Xie, X. F. Ni, N. Biyikli, H. Morkoç, Lin Zhou, David Smith, C. K. Inoki, T. S. Kuan

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Physics & Astronomy