Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy

Y. Fu, F. Yun, Y. T. Moon, Ü Özgür, J. Q. Xie, X. F. Ni, N. Biyikli, H. Morkoç, Lin Zhou, David Smith, C. K. Inoki, T. S. Kuan

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We report on the effectiveness of porous TiN nanonetworks on the reduction of threading dislocations (TDs) in GaN grown by metal-organic vapor-phase epitaxy (MOVPE). The porous TiN networks were formed by in situ annealing of thin-deposited Ti films deposited ex situ on GaN templates within the MOVPE growth chamber. Different annealing parameters in relation to surface porosity of TiN networks were investigated. Transmission electron micrographs indicated dislocation reduction by factors of up to 10 in GaN layers grown on the TiN nanonetwork, compared with a control sample. TiN prevented many dislocations present in the GaN templates from penetrating into the upper layer. Microscale epitaxial lateral overgrowth of GaN above TiN also contributed to TD reduction. The surface porosity of the TiN network had a strong impact on the efficiency of TD reduction. X-ray-diffraction and time-resolved photoluminescence measurements further confirmed the improved GaN quality.

Original languageEnglish (US)
Article number033518
JournalJournal of Applied Physics
Issue number3
StatePublished - Feb 1 2006


ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Fu, Y., Yun, F., Moon, Y. T., Özgür, Ü., Xie, J. Q., Ni, X. F., Biyikli, N., Morkoç, H., Zhou, L., Smith, D., Inoki, C. K., & Kuan, T. S. (2006). Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy. Journal of Applied Physics, 99(3), [033518]. https://doi.org/10.1063/1.2170422