Abstract
Ductility is controlled at the atomic level by dislocation kink motion. The migration energy for kinks on the 30°partial dislocation in silicon has been computed ab initio in agreement with experiment. The electronic structure changes from semiconducting to metallic at the saddle-point configuration. Band structure energy controls kink motion, so valence electrons control shearing motions involved with ductility, whereas tensile forces involved in fracture depend on both ion-ion and valence forces. Doping effects on dislocation mobility are explained.
Original language | English (US) |
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Pages (from-to) | 3392-3395 |
Number of pages | 4 |
Journal | Physical Review Letters |
Volume | 74 |
Issue number | 17 |
DOIs | |
State | Published - 1995 |
ASJC Scopus subject areas
- General Physics and Astronomy