Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical properties

R. Leon, S. Chaparro, Shane Johnson, C. Navarro, X. Jin, Yong-Hang Zhang, J. Siegert, S. Marcinkevičius, X. Z. Liao, J. Zou

Research output: Contribution to journalArticle

35 Scopus citations

Abstract

Misfit dislocations were used to modify the surface morphology and to attain spatial ordering of quantum dots (QDs) by molecular beam epitaxy. Effects of anneal time and temperature on strain-relaxed In xGa 1-xAs/GaAs layers and subsequent spatial ordering of InAs QDs were investigated. Photoluminescence (PL) and time-resolved PL was used to study the effects of increased QD positional ordering, increased QD uniformity, and their proximity to dislocation arrays on their optical properties. Narrower inhomogeneous PL broadening from the QDs ordered on dislocation arrays were observed, and differences in PL dynamics were found.

Original languageEnglish (US)
Pages (from-to)5826-5830
Number of pages5
JournalJournal of Applied Physics
Volume91
Issue number9
DOIs
StatePublished - May 1 2002

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Leon, R., Chaparro, S., Johnson, S., Navarro, C., Jin, X., Zhang, Y-H., Siegert, J., Marcinkevičius, S., Liao, X. Z., & Zou, J. (2002). Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical properties. Journal of Applied Physics, 91(9), 5826-5830. https://doi.org/10.1063/1.1467963