Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical properties

R. Leon; S. Chaparro; Shane Johnson; C. Navarro; X. Jin; Yong-Hang Zhang; J. Siegert; S. Marcinkevičius; X. Z. Liao; J. Zou

doi:10.1063/1.1467963

Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical properties

R. Leon, S. Chaparro, Shane Johnson, C. Navarro, X. Jin, Yong-Hang Zhang, J. Siegert, S. Marcinkevičius, X. Z. Liao, J. Zou

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

Misfit dislocations were used to modify the surface morphology and to attain spatial ordering of quantum dots (QDs) by molecular beam epitaxy. Effects of anneal time and temperature on strain-relaxed In _xGa _1-xAs/GaAs layers and subsequent spatial ordering of InAs QDs were investigated. Photoluminescence (PL) and time-resolved PL was used to study the effects of increased QD positional ordering, increased QD uniformity, and their proximity to dislocation arrays on their optical properties. Narrower inhomogeneous PL broadening from the QDs ordered on dislocation arrays were observed, and differences in PL dynamics were found.

Original language	English (US)
Pages (from-to)	5826-5830
Number of pages	5
Journal	Journal of Applied Physics
Volume	91
Issue number	9
DOIs	https://doi.org/10.1063/1.1467963
State	Published - May 1 2002

ASJC Scopus subject areas

General Physics and Astronomy

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abstract = "Misfit dislocations were used to modify the surface morphology and to attain spatial ordering of quantum dots (QDs) by molecular beam epitaxy. Effects of anneal time and temperature on strain-relaxed In xGa 1-xAs/GaAs layers and subsequent spatial ordering of InAs QDs were investigated. Photoluminescence (PL) and time-resolved PL was used to study the effects of increased QD positional ordering, increased QD uniformity, and their proximity to dislocation arrays on their optical properties. Narrower inhomogeneous PL broadening from the QDs ordered on dislocation arrays were observed, and differences in PL dynamics were found.",

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AU - Leon, R.

AU - Chaparro, S.

AU - Johnson, Shane

AU - Navarro, C.

AU - Jin, X.

AU - Zhang, Yong-Hang

AU - Siegert, J.

AU - Marcinkevičius, S.

AU - Liao, X. Z.

AU - Zou, J.

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AB - Misfit dislocations were used to modify the surface morphology and to attain spatial ordering of quantum dots (QDs) by molecular beam epitaxy. Effects of anneal time and temperature on strain-relaxed In xGa 1-xAs/GaAs layers and subsequent spatial ordering of InAs QDs were investigated. Photoluminescence (PL) and time-resolved PL was used to study the effects of increased QD positional ordering, increased QD uniformity, and their proximity to dislocation arrays on their optical properties. Narrower inhomogeneous PL broadening from the QDs ordered on dislocation arrays were observed, and differences in PL dynamics were found.

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Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical properties

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