Dislocation engineering in multicrystalline silicon

Mariana Bertoni, Clémence Colin, Tonio Buonassisi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

Dislocations are known to be among the most deleterious performance-limiting defects in multicrystalline silicon (mc-Si) based solar cells. In this work, we propose a method to remove dislocations based on a high temperature treatment. Dislocation density reductions of >95% are achieved in commercial ribbon silicon with a double-sided silicon nitride coating via high temperature annealing under ambient conditions. The dislocation density reduction follows temperature-dependent and time-dependent models developed by Kuhlmann et al. for the annealing of dislocations in face-centered cubic metals. It is believed that higher annealing temperatures (>1170°C) allow dislocation movement unconstrained by crystallographic glide planes, leading to pairwise dislocation annihilation within minutes.

Original languageEnglish (US)
Title of host publicationSolid State Phenomena
PublisherTrans Tech Publications Ltd
Pages11-18
Number of pages8
Volume156-158
ISBN (Print)3908451744, 9783908451747
DOIs
StatePublished - 2009
Externally publishedYes
Event13th International Autumn Meeting - Gettering and Defect Engineering in Semiconductor Technology, GADEST 2009 - Berlin, Germany
Duration: Sep 26 2009Oct 2 2009

Publication series

NameSolid State Phenomena
Volume156-158
ISSN (Print)10120394

Other

Other13th International Autumn Meeting - Gettering and Defect Engineering in Semiconductor Technology, GADEST 2009
CountryGermany
CityBerlin
Period9/26/0910/2/09

Fingerprint

Silicon
engineering
silicon
Annealing
Temperature
annealing
Silicon nitride
Solar cells
Metals
Coatings
Defects
silicon nitrides
ribbons
solar cells
coatings
temperature
defects
metals

Keywords

  • Annihilation
  • Dislocations
  • High-temperature anneal
  • Mc-si
  • Ribbon silicon

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

Cite this

Bertoni, M., Colin, C., & Buonassisi, T. (2009). Dislocation engineering in multicrystalline silicon. In Solid State Phenomena (Vol. 156-158, pp. 11-18). (Solid State Phenomena; Vol. 156-158). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.156-158.11

Dislocation engineering in multicrystalline silicon. / Bertoni, Mariana; Colin, Clémence; Buonassisi, Tonio.

Solid State Phenomena. Vol. 156-158 Trans Tech Publications Ltd, 2009. p. 11-18 (Solid State Phenomena; Vol. 156-158).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bertoni, M, Colin, C & Buonassisi, T 2009, Dislocation engineering in multicrystalline silicon. in Solid State Phenomena. vol. 156-158, Solid State Phenomena, vol. 156-158, Trans Tech Publications Ltd, pp. 11-18, 13th International Autumn Meeting - Gettering and Defect Engineering in Semiconductor Technology, GADEST 2009, Berlin, Germany, 9/26/09. https://doi.org/10.4028/www.scientific.net/SSP.156-158.11
Bertoni M, Colin C, Buonassisi T. Dislocation engineering in multicrystalline silicon. In Solid State Phenomena. Vol. 156-158. Trans Tech Publications Ltd. 2009. p. 11-18. (Solid State Phenomena). https://doi.org/10.4028/www.scientific.net/SSP.156-158.11
Bertoni, Mariana ; Colin, Clémence ; Buonassisi, Tonio. / Dislocation engineering in multicrystalline silicon. Solid State Phenomena. Vol. 156-158 Trans Tech Publications Ltd, 2009. pp. 11-18 (Solid State Phenomena).
@inproceedings{012dff6b70794f7db6e39cfa38fbc8fb,
title = "Dislocation engineering in multicrystalline silicon",
abstract = "Dislocations are known to be among the most deleterious performance-limiting defects in multicrystalline silicon (mc-Si) based solar cells. In this work, we propose a method to remove dislocations based on a high temperature treatment. Dislocation density reductions of >95{\%} are achieved in commercial ribbon silicon with a double-sided silicon nitride coating via high temperature annealing under ambient conditions. The dislocation density reduction follows temperature-dependent and time-dependent models developed by Kuhlmann et al. for the annealing of dislocations in face-centered cubic metals. It is believed that higher annealing temperatures (>1170°C) allow dislocation movement unconstrained by crystallographic glide planes, leading to pairwise dislocation annihilation within minutes.",
keywords = "Annihilation, Dislocations, High-temperature anneal, Mc-si, Ribbon silicon",
author = "Mariana Bertoni and Cl{\'e}mence Colin and Tonio Buonassisi",
year = "2009",
doi = "10.4028/www.scientific.net/SSP.156-158.11",
language = "English (US)",
isbn = "3908451744",
volume = "156-158",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
pages = "11--18",
booktitle = "Solid State Phenomena",

}

TY - GEN

T1 - Dislocation engineering in multicrystalline silicon

AU - Bertoni, Mariana

AU - Colin, Clémence

AU - Buonassisi, Tonio

PY - 2009

Y1 - 2009

N2 - Dislocations are known to be among the most deleterious performance-limiting defects in multicrystalline silicon (mc-Si) based solar cells. In this work, we propose a method to remove dislocations based on a high temperature treatment. Dislocation density reductions of >95% are achieved in commercial ribbon silicon with a double-sided silicon nitride coating via high temperature annealing under ambient conditions. The dislocation density reduction follows temperature-dependent and time-dependent models developed by Kuhlmann et al. for the annealing of dislocations in face-centered cubic metals. It is believed that higher annealing temperatures (>1170°C) allow dislocation movement unconstrained by crystallographic glide planes, leading to pairwise dislocation annihilation within minutes.

AB - Dislocations are known to be among the most deleterious performance-limiting defects in multicrystalline silicon (mc-Si) based solar cells. In this work, we propose a method to remove dislocations based on a high temperature treatment. Dislocation density reductions of >95% are achieved in commercial ribbon silicon with a double-sided silicon nitride coating via high temperature annealing under ambient conditions. The dislocation density reduction follows temperature-dependent and time-dependent models developed by Kuhlmann et al. for the annealing of dislocations in face-centered cubic metals. It is believed that higher annealing temperatures (>1170°C) allow dislocation movement unconstrained by crystallographic glide planes, leading to pairwise dislocation annihilation within minutes.

KW - Annihilation

KW - Dislocations

KW - High-temperature anneal

KW - Mc-si

KW - Ribbon silicon

UR - http://www.scopus.com/inward/record.url?scp=75849142249&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=75849142249&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/SSP.156-158.11

DO - 10.4028/www.scientific.net/SSP.156-158.11

M3 - Conference contribution

SN - 3908451744

SN - 9783908451747

VL - 156-158

T3 - Solid State Phenomena

SP - 11

EP - 18

BT - Solid State Phenomena

PB - Trans Tech Publications Ltd

ER -