@inproceedings{012dff6b70794f7db6e39cfa38fbc8fb,
title = "Dislocation engineering in multicrystalline silicon",
abstract = "Dislocations are known to be among the most deleterious performance-limiting defects in multicrystalline silicon (mc-Si) based solar cells. In this work, we propose a method to remove dislocations based on a high temperature treatment. Dislocation density reductions of >95% are achieved in commercial ribbon silicon with a double-sided silicon nitride coating via high temperature annealing under ambient conditions. The dislocation density reduction follows temperature-dependent and time-dependent models developed by Kuhlmann et al. for the annealing of dislocations in face-centered cubic metals. It is believed that higher annealing temperatures (>1170°C) allow dislocation movement unconstrained by crystallographic glide planes, leading to pairwise dislocation annihilation within minutes.",
keywords = "Annihilation, Dislocations, High-temperature anneal, Mc-si, Ribbon silicon",
author = "Mariana Bertoni and Cl{\'e}mence Colin and Tonio Buonassisi",
year = "2009",
doi = "10.4028/www.scientific.net/SSP.156-158.11",
language = "English (US)",
isbn = "3908451744",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
pages = "11--18",
booktitle = "Gettering and Defect Engineering in Semiconductor Technology XIII",
note = "13th International Autumn Meeting - Gettering and Defect Engineering in Semiconductor Technology, GADEST 2009 ; Conference date: 26-09-2009 Through 02-10-2009",
}