Dislocation engineering in multicrystalline silicon

Mariana Bertoni, Clémence Colin, Tonio Buonassisi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations


Dislocations are known to be among the most deleterious performance-limiting defects in multicrystalline silicon (mc-Si) based solar cells. In this work, we propose a method to remove dislocations based on a high temperature treatment. Dislocation density reductions of >95% are achieved in commercial ribbon silicon with a double-sided silicon nitride coating via high temperature annealing under ambient conditions. The dislocation density reduction follows temperature-dependent and time-dependent models developed by Kuhlmann et al. for the annealing of dislocations in face-centered cubic metals. It is believed that higher annealing temperatures (>1170°C) allow dislocation movement unconstrained by crystallographic glide planes, leading to pairwise dislocation annihilation within minutes.

Original languageEnglish (US)
Title of host publicationSolid State Phenomena
PublisherTrans Tech Publications Ltd
Number of pages8
ISBN (Print)3908451744, 9783908451747
Publication statusPublished - 2009
Externally publishedYes
Event13th International Autumn Meeting - Gettering and Defect Engineering in Semiconductor Technology, GADEST 2009 - Berlin, Germany
Duration: Sep 26 2009Oct 2 2009

Publication series

NameSolid State Phenomena
ISSN (Print)10120394


Other13th International Autumn Meeting - Gettering and Defect Engineering in Semiconductor Technology, GADEST 2009



  • Annihilation
  • Dislocations
  • High-temperature anneal
  • Mc-si
  • Ribbon silicon

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

Cite this

Bertoni, M., Colin, C., & Buonassisi, T. (2009). Dislocation engineering in multicrystalline silicon. In Solid State Phenomena (Vol. 156-158, pp. 11-18). (Solid State Phenomena; Vol. 156-158). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.156-158.11