Dislocation engineering in multicrystalline silicon

Mariana Bertoni, Clémence Colin, Tonio Buonassisi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations

Abstract

Dislocations are known to be among the most deleterious performance-limiting defects in multicrystalline silicon (mc-Si) based solar cells. In this work, we propose a method to remove dislocations based on a high temperature treatment. Dislocation density reductions of >95% are achieved in commercial ribbon silicon with a double-sided silicon nitride coating via high temperature annealing under ambient conditions. The dislocation density reduction follows temperature-dependent and time-dependent models developed by Kuhlmann et al. for the annealing of dislocations in face-centered cubic metals. It is believed that higher annealing temperatures (>1170°C) allow dislocation movement unconstrained by crystallographic glide planes, leading to pairwise dislocation annihilation within minutes.

Original languageEnglish (US)
Title of host publicationSolid State Phenomena
PublisherTrans Tech Publications Ltd
Pages11-18
Number of pages8
Volume156-158
ISBN (Print)3908451744, 9783908451747
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event13th International Autumn Meeting - Gettering and Defect Engineering in Semiconductor Technology, GADEST 2009 - Berlin, Germany
Duration: Sep 26 2009Oct 2 2009

Publication series

NameSolid State Phenomena
Volume156-158
ISSN (Print)10120394

Other

Other13th International Autumn Meeting - Gettering and Defect Engineering in Semiconductor Technology, GADEST 2009
CountryGermany
CityBerlin
Period9/26/0910/2/09

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Keywords

  • Annihilation
  • Dislocations
  • High-temperature anneal
  • Mc-si
  • Ribbon silicon

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

Cite this

Bertoni, M., Colin, C., & Buonassisi, T. (2009). Dislocation engineering in multicrystalline silicon. In Solid State Phenomena (Vol. 156-158, pp. 11-18). (Solid State Phenomena; Vol. 156-158). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.156-158.11