Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si

O. Contreras, Fernando Ponce, J. Christen, A. Dadgar, A. Krost

Research output: Contribution to journalArticle

94 Citations (Scopus)

Abstract

The dislocation annihilation in GaN epitaxy on Si was investigated by silicon delta-doping. The dislocations were bent at the delta-doping position at the segments lying on the basal plane, was shown by transmission electron microscopy (TEM) observations. The process was achieved via pining of dislocations at the basal plane by the silicon delta-doping was suggested by the studies.

Original languageEnglish (US)
Pages (from-to)4712-4714
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number25
DOIs
StatePublished - Dec 16 2003

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epitaxy
silicon
transmission electron microscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si. / Contreras, O.; Ponce, Fernando; Christen, J.; Dadgar, A.; Krost, A.

In: Applied Physics Letters, Vol. 81, No. 25, 16.12.2003, p. 4712-4714.

Research output: Contribution to journalArticle

Contreras, O, Ponce, F, Christen, J, Dadgar, A & Krost, A 2003, 'Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si', Applied Physics Letters, vol. 81, no. 25, pp. 4712-4714. https://doi.org/10.1063/1.1529309
Contreras, O. ; Ponce, Fernando ; Christen, J. ; Dadgar, A. ; Krost, A. / Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si. In: Applied Physics Letters. 2003 ; Vol. 81, No. 25. pp. 4712-4714.
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