Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si

O. Contreras; Fernando Ponce; J. Christen; A. Dadgar; A. Krost

doi:10.1063/1.1529309

Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si

O. Contreras, Fernando Ponce, J. Christen, A. Dadgar, A. Krost

Physics

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107 Scopus citations

Abstract

The dislocation annihilation in GaN epitaxy on Si was investigated by silicon delta-doping. The dislocations were bent at the delta-doping position at the segments lying on the basal plane, was shown by transmission electron microscopy (TEM) observations. The process was achieved via pining of dislocations at the basal plane by the silicon delta-doping was suggested by the studies.

Original language	English (US)
Pages (from-to)	4712-4714
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	25
DOIs	https://doi.org/10.1063/1.1529309
State	Published - Dec 16 2003

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1529309

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title = "Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si",

abstract = "The dislocation annihilation in GaN epitaxy on Si was investigated by silicon delta-doping. The dislocations were bent at the delta-doping position at the segments lying on the basal plane, was shown by transmission electron microscopy (TEM) observations. The process was achieved via pining of dislocations at the basal plane by the silicon delta-doping was suggested by the studies.",

author = "O. Contreras and Fernando Ponce and J. Christen and A. Dadgar and A. Krost",

year = "2003",

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T1 - Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si

AU - Contreras, O.

AU - Ponce, Fernando

AU - Christen, J.

AU - Dadgar, A.

AU - Krost, A.

PY - 2003/12/16

Y1 - 2003/12/16

N2 - The dislocation annihilation in GaN epitaxy on Si was investigated by silicon delta-doping. The dislocations were bent at the delta-doping position at the segments lying on the basal plane, was shown by transmission electron microscopy (TEM) observations. The process was achieved via pining of dislocations at the basal plane by the silicon delta-doping was suggested by the studies.

AB - The dislocation annihilation in GaN epitaxy on Si was investigated by silicon delta-doping. The dislocations were bent at the delta-doping position at the segments lying on the basal plane, was shown by transmission electron microscopy (TEM) observations. The process was achieved via pining of dislocations at the basal plane by the silicon delta-doping was suggested by the studies.

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JF - Applied Physics Letters

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Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si

Abstract

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