Discrete impurity effects in silicon quantum dots

S. N. Milicic, Dragica Vasileska, R. Akis, A. Gunther, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We have developed efficient self-consistent 3D Schrödinger-Poisson solver to model the energy level spectrum in silicon quantum dots. We find that the energy level spectrum in the dot can be easily tuned by varying the applied voltage on the top and side gates, thus leading to symmetric or asymmetric parabolic confinement in the plane parallel to the semiconductor/oxide interface. We also investigate the influence of different impurity distributions in the semiconductor substrate on the shape of the wavefunctions and the energy spectrum in the dot. We noticed that different number and different distribution of the impurity atoms in the dot influences the energy spectrum by lifting degeneracy of the levels. We also observe significant mode mixing in the wavefunctions when using atomistic description of the impurity atoms in the semi conductor.

Original languageEnglish (US)
Title of host publication2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000
EditorsM. Laudon, B. Romanowicz
Pages520-523
Number of pages4
StatePublished - Dec 1 2000
Event2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000 - San Diego, CA, United States
Duration: Mar 27 2000Mar 29 2000

Publication series

Name2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000

Other

Other2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000
CountryUnited States
CitySan Diego, CA
Period3/27/003/29/00

Keywords

  • 3D modeling
  • Discrete impurity effects
  • Silicon quantum dots

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Discrete impurity effects in silicon quantum dots'. Together they form a unique fingerprint.

  • Cite this

    Milicic, S. N., Vasileska, D., Akis, R., Gunther, A., & Goodnick, S. (2000). Discrete impurity effects in silicon quantum dots. In M. Laudon, & B. Romanowicz (Eds.), 2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000 (pp. 520-523). (2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000).