Discrete dopant effects in ultrasmall fully depleted ballistic SOI MOSFETs

M. J. Gilbert, D. K. Ferry

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

Using a recursive scattering matrix variant, we examine the effects of discrete dopants on the threshold voltage of ultrasmall fully depleted SOI MOSFETs. We find that more highly doped channels produce more interference than do more lightly doped channels. This causes larger fluctuations in threshold voltage. Further, we find that the location of the channel dopants is quite important in the direction of the threshold voltage shift with dopants occurring closer to the source of the device having a larger impact.

Original languageEnglish (US)
Pages (from-to)277-282
Number of pages6
JournalSuperlattices and Microstructures
Volume34
Issue number3-6
DOIs
StatePublished - Sep 1 2003

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Discrete dopant effects in ultrasmall fully depleted ballistic SOI MOSFETs'. Together they form a unique fingerprint.

  • Cite this