Directed 2D-to-3D pattern transfer method for controlled fabrication of topologically complex 3D features in silicon

Konrad Rykaczewski; Owen J. Hildreth; Ching P. Wong; Andrei G. Fedorov; John Henry J. Scott

doi:10.1002/adma.201003833

Directed 2D-to-3D pattern transfer method for controlled fabrication of topologically complex 3D features in silicon

Konrad Rykaczewski, Owen J. Hildreth, Ching P. Wong, Andrei G. Fedorov, John Henry J. Scott

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

A process that allows control over the 3D motion of catalyst nanostructures during metal-assisted chemical etching by their local pinning prior to etching is demonstrated. The pinning material acts as a fulcrum for rotation of the catalyst structures resulting in etching of silicon features with rotational geometry.

Original language	English (US)
Pages (from-to)	659-663
Number of pages	5
Journal	Advanced Materials
Volume	23
Issue number	5
DOIs	https://doi.org/10.1002/adma.201003833
State	Published - Feb 1 2011
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201003833

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title = "Directed 2D-to-3D pattern transfer method for controlled fabrication of topologically complex 3D features in silicon",

abstract = "A process that allows control over the 3D motion of catalyst nanostructures during metal-assisted chemical etching by their local pinning prior to etching is demonstrated. The pinning material acts as a fulcrum for rotation of the catalyst structures resulting in etching of silicon features with rotational geometry.",

author = "Konrad Rykaczewski and Hildreth, {Owen J.} and Wong, {Ching P.} and Fedorov, {Andrei G.} and Scott, {John Henry J.}",

year = "2011",

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doi = "10.1002/adma.201003833",

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journal = "Advanced Materials",

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T1 - Directed 2D-to-3D pattern transfer method for controlled fabrication of topologically complex 3D features in silicon

AU - Rykaczewski, Konrad

AU - Hildreth, Owen J.

AU - Wong, Ching P.

AU - Fedorov, Andrei G.

AU - Scott, John Henry J.

PY - 2011/2/1

Y1 - 2011/2/1

N2 - A process that allows control over the 3D motion of catalyst nanostructures during metal-assisted chemical etching by their local pinning prior to etching is demonstrated. The pinning material acts as a fulcrum for rotation of the catalyst structures resulting in etching of silicon features with rotational geometry.

AB - A process that allows control over the 3D motion of catalyst nanostructures during metal-assisted chemical etching by their local pinning prior to etching is demonstrated. The pinning material acts as a fulcrum for rotation of the catalyst structures resulting in etching of silicon features with rotational geometry.

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JO - Advanced Materials

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Directed 2D-to-3D pattern transfer method for controlled fabrication of topologically complex 3D features in silicon

Abstract

ASJC Scopus subject areas

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