Directed 2D-to-3D pattern transfer method for controlled fabrication of topologically complex 3D features in silicon

Konrad Rykaczewski; Owen J. Hildreth; Ching P. Wong; Andrei G. Fedorov; John Henry J. Scott

doi:10.1002/adma.201003833

Directed 2D-to-3D pattern transfer method for controlled fabrication of topologically complex 3D features in silicon

Konrad Rykaczewski, Owen J. Hildreth, Ching P. Wong, Andrei G. Fedorov, John Henry J. Scott

Arizona State University

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

A process that allows control over the 3D motion of catalyst nanostructures during metal-assisted chemical etching by their local pinning prior to etching is demonstrated. The pinning material acts as a fulcrum for rotation of the catalyst structures resulting in etching of silicon features with rotational geometry.

Original language	English (US)
Pages (from-to)	659-663
Number of pages	5
Journal	Advanced Materials
Volume	23
Issue number	5
DOIs	https://doi.org/10.1002/adma.201003833
State	Published - Feb 1 2011

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201003833

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title = "Directed 2D-to-3D pattern transfer method for controlled fabrication of topologically complex 3D features in silicon",

abstract = "A process that allows control over the 3D motion of catalyst nanostructures during metal-assisted chemical etching by their local pinning prior to etching is demonstrated. The pinning material acts as a fulcrum for rotation of the catalyst structures resulting in etching of silicon features with rotational geometry.",

author = "Konrad Rykaczewski and Hildreth, {Owen J.} and Wong, {Ching P.} and Fedorov, {Andrei G.} and Scott, {John Henry J.}",

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AU - Rykaczewski, Konrad

AU - Hildreth, Owen J.

AU - Wong, Ching P.

AU - Fedorov, Andrei G.

AU - Scott, John Henry J.

PY - 2011/2/1

Y1 - 2011/2/1

N2 - A process that allows control over the 3D motion of catalyst nanostructures during metal-assisted chemical etching by their local pinning prior to etching is demonstrated. The pinning material acts as a fulcrum for rotation of the catalyst structures resulting in etching of silicon features with rotational geometry.

AB - A process that allows control over the 3D motion of catalyst nanostructures during metal-assisted chemical etching by their local pinning prior to etching is demonstrated. The pinning material acts as a fulcrum for rotation of the catalyst structures resulting in etching of silicon features with rotational geometry.

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Directed 2D-to-3D pattern transfer method for controlled fabrication of topologically complex 3D features in silicon

Abstract

ASJC Scopus subject areas

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