Direct semiconductor bonded 5J cell for space and terrestrial applications

P. T. Chiu, D. C. Law, R. L. Woo, S. B. Singer, D. Bhusari, W. D. Hong, A. Zakaria, J. Boisvert, S. Mesropian, Richard King, N. H. Karam

Research output: Contribution to journalArticle

79 Citations (Scopus)

Abstract

Spectrolab has demonstrated a 2.2/1.7/1.4/1.05/0.73 eV 5J cell with an efficiency of 37.8% under 1 sun AM1.5G spectrum and 35.1% efficiency for 1 sun AM0. The top three junctions and bottom two junctions were grown on GaAs and InP substrates, respectively, by metal organic vapor phase epitaxy. The GaAs-and InP-based cells were then direct bonded to create a low-resistance, high-transmissive interface. Both the space and terrestrial cells have high 1 sun Voc between 4.75 and 4.78 V. Initial tests of the terrestrial cells at concentration are promising with efficiencies increasing up to 10× concentration to a maximum value close to 41%.

Original languageEnglish (US)
Article number6595564
Pages (from-to)493-497
Number of pages5
JournalIEEE Journal of Photovoltaics
Volume4
Issue number1
DOIs
StatePublished - Jan 2014
Externally publishedYes

Fingerprint

Sun
Semiconductor materials
sun
cells
Vapor phase epitaxy
low resistance
Metals
vapor phase epitaxy
Substrates
metals
gallium arsenide

Keywords

  • Direct wafer bonding
  • multijunction cells

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Chiu, P. T., Law, D. C., Woo, R. L., Singer, S. B., Bhusari, D., Hong, W. D., ... Karam, N. H. (2014). Direct semiconductor bonded 5J cell for space and terrestrial applications. IEEE Journal of Photovoltaics, 4(1), 493-497. [6595564]. https://doi.org/10.1109/JPHOTOV.2013.2279336

Direct semiconductor bonded 5J cell for space and terrestrial applications. / Chiu, P. T.; Law, D. C.; Woo, R. L.; Singer, S. B.; Bhusari, D.; Hong, W. D.; Zakaria, A.; Boisvert, J.; Mesropian, S.; King, Richard; Karam, N. H.

In: IEEE Journal of Photovoltaics, Vol. 4, No. 1, 6595564, 01.2014, p. 493-497.

Research output: Contribution to journalArticle

Chiu, PT, Law, DC, Woo, RL, Singer, SB, Bhusari, D, Hong, WD, Zakaria, A, Boisvert, J, Mesropian, S, King, R & Karam, NH 2014, 'Direct semiconductor bonded 5J cell for space and terrestrial applications', IEEE Journal of Photovoltaics, vol. 4, no. 1, 6595564, pp. 493-497. https://doi.org/10.1109/JPHOTOV.2013.2279336
Chiu PT, Law DC, Woo RL, Singer SB, Bhusari D, Hong WD et al. Direct semiconductor bonded 5J cell for space and terrestrial applications. IEEE Journal of Photovoltaics. 2014 Jan;4(1):493-497. 6595564. https://doi.org/10.1109/JPHOTOV.2013.2279336
Chiu, P. T. ; Law, D. C. ; Woo, R. L. ; Singer, S. B. ; Bhusari, D. ; Hong, W. D. ; Zakaria, A. ; Boisvert, J. ; Mesropian, S. ; King, Richard ; Karam, N. H. / Direct semiconductor bonded 5J cell for space and terrestrial applications. In: IEEE Journal of Photovoltaics. 2014 ; Vol. 4, No. 1. pp. 493-497.
@article{3ab290e168774b33ae3203706f1ba43d,
title = "Direct semiconductor bonded 5J cell for space and terrestrial applications",
abstract = "Spectrolab has demonstrated a 2.2/1.7/1.4/1.05/0.73 eV 5J cell with an efficiency of 37.8{\%} under 1 sun AM1.5G spectrum and 35.1{\%} efficiency for 1 sun AM0. The top three junctions and bottom two junctions were grown on GaAs and InP substrates, respectively, by metal organic vapor phase epitaxy. The GaAs-and InP-based cells were then direct bonded to create a low-resistance, high-transmissive interface. Both the space and terrestrial cells have high 1 sun Voc between 4.75 and 4.78 V. Initial tests of the terrestrial cells at concentration are promising with efficiencies increasing up to 10× concentration to a maximum value close to 41{\%}.",
keywords = "Direct wafer bonding, multijunction cells",
author = "Chiu, {P. T.} and Law, {D. C.} and Woo, {R. L.} and Singer, {S. B.} and D. Bhusari and Hong, {W. D.} and A. Zakaria and J. Boisvert and S. Mesropian and Richard King and Karam, {N. H.}",
year = "2014",
month = "1",
doi = "10.1109/JPHOTOV.2013.2279336",
language = "English (US)",
volume = "4",
pages = "493--497",
journal = "IEEE Journal of Photovoltaics",
issn = "2156-3381",
publisher = "IEEE Electron Devices Society",
number = "1",

}

TY - JOUR

T1 - Direct semiconductor bonded 5J cell for space and terrestrial applications

AU - Chiu, P. T.

AU - Law, D. C.

AU - Woo, R. L.

AU - Singer, S. B.

AU - Bhusari, D.

AU - Hong, W. D.

AU - Zakaria, A.

AU - Boisvert, J.

AU - Mesropian, S.

AU - King, Richard

AU - Karam, N. H.

PY - 2014/1

Y1 - 2014/1

N2 - Spectrolab has demonstrated a 2.2/1.7/1.4/1.05/0.73 eV 5J cell with an efficiency of 37.8% under 1 sun AM1.5G spectrum and 35.1% efficiency for 1 sun AM0. The top three junctions and bottom two junctions were grown on GaAs and InP substrates, respectively, by metal organic vapor phase epitaxy. The GaAs-and InP-based cells were then direct bonded to create a low-resistance, high-transmissive interface. Both the space and terrestrial cells have high 1 sun Voc between 4.75 and 4.78 V. Initial tests of the terrestrial cells at concentration are promising with efficiencies increasing up to 10× concentration to a maximum value close to 41%.

AB - Spectrolab has demonstrated a 2.2/1.7/1.4/1.05/0.73 eV 5J cell with an efficiency of 37.8% under 1 sun AM1.5G spectrum and 35.1% efficiency for 1 sun AM0. The top three junctions and bottom two junctions were grown on GaAs and InP substrates, respectively, by metal organic vapor phase epitaxy. The GaAs-and InP-based cells were then direct bonded to create a low-resistance, high-transmissive interface. Both the space and terrestrial cells have high 1 sun Voc between 4.75 and 4.78 V. Initial tests of the terrestrial cells at concentration are promising with efficiencies increasing up to 10× concentration to a maximum value close to 41%.

KW - Direct wafer bonding

KW - multijunction cells

UR - http://www.scopus.com/inward/record.url?scp=84891558800&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84891558800&partnerID=8YFLogxK

U2 - 10.1109/JPHOTOV.2013.2279336

DO - 10.1109/JPHOTOV.2013.2279336

M3 - Article

AN - SCOPUS:84891558800

VL - 4

SP - 493

EP - 497

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

SN - 2156-3381

IS - 1

M1 - 6595564

ER -