Direct patterning of nanometer-scale silicide structures on silicon by ion-beam implantation through a thin barrier layer

M. M. Mitan, D. P. Pivin, Terry Alford, J. W. Mayer

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

CoSi2 structures were formed by focused ion-beam implantation. Patterned suicide lines with dimensions down to 150 nm were produced on (100) silicon. The process involved the ion implantation of 200 keV As++ through a cobalt (34 nm)/oxide (~2 nm) thin film structure. The thin oxide at the Si/Co interface acted as a selective reaction barrier. Ion-beam mixing disrupted the oxide layer to allow silicidation to proceed during subsequent rapid thermal anneal treatments. Reactions were inhibited in nonimplanted areas. A threshold dose of 3 × 1015 cm-2 was required for process initiation. Electrical measurements resulted in resistivities ranging from 15 to 30 μΩ cm.

Original languageEnglish (US)
Pages (from-to)2727-2729
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number18
DOIs
StatePublished - Apr 30 2001

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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