Direct focused ion beam (FIB) is presented as a method for patterning of CoSi2 silicide structures on a silicon surface. This technique allows the fabrication of submicron structures without the use of resist-based Lithography methods.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Nov 1 2001|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering