Direct patterning of nanometer-scale silicide structures by focused ion-beam implantation through a thin barrier layer

M. M. Mitan; D. P. Pivin; Terry Alford; J. W. Mayer

doi:10.1116/1.1408953

Direct patterning of nanometer-scale silicide structures by focused ion-beam implantation through a thin barrier layer

M. M. Mitan, D. P. Pivin, Terry Alford, J. W. Mayer

Chemical Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Direct focused ion beam (FIB) is presented as a method for patterning of CoSi₂ silicide structures on a silicon surface. This technique allows the fabrication of submicron structures without the use of resist-based Lithography methods.

Original language	English (US)
Pages (from-to)	2525-2528
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	6
DOIs	https://doi.org/10.1116/1.1408953
State	Published - Nov 2001

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1408953

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@article{60ddf59f513d4cd48de70f235ef355a1,

title = "Direct patterning of nanometer-scale silicide structures by focused ion-beam implantation through a thin barrier layer",

abstract = "Direct focused ion beam (FIB) is presented as a method for patterning of CoSi2 silicide structures on a silicon surface. This technique allows the fabrication of submicron structures without the use of resist-based Lithography methods.",

author = "Mitan, {M. M.} and Pivin, {D. P.} and Terry Alford and Mayer, {J. W.}",

year = "2001",

month = nov,

doi = "10.1116/1.1408953",

language = "English (US)",

volume = "19",

pages = "2525--2528",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "6",

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T1 - Direct patterning of nanometer-scale silicide structures by focused ion-beam implantation through a thin barrier layer

AU - Mitan, M. M.

AU - Pivin, D. P.

AU - Alford, Terry

AU - Mayer, J. W.

PY - 2001/11

Y1 - 2001/11

N2 - Direct focused ion beam (FIB) is presented as a method for patterning of CoSi2 silicide structures on a silicon surface. This technique allows the fabrication of submicron structures without the use of resist-based Lithography methods.

AB - Direct focused ion beam (FIB) is presented as a method for patterning of CoSi2 silicide structures on a silicon surface. This technique allows the fabrication of submicron structures without the use of resist-based Lithography methods.

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U2 - 10.1116/1.1408953

DO - 10.1116/1.1408953

M3 - Article

AN - SCOPUS:0035519483

SN - 1071-1023

VL - 19

SP - 2525

EP - 2528

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

ER -

Direct patterning of nanometer-scale silicide structures by focused ion-beam implantation through a thin barrier layer

Abstract

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