Direct patterning of nanometer-scale silicide structures by focused ion-beam implantation through a thin barrier layer

M. M. Mitan, D. P. Pivin, Terry Alford, J. W. Mayer

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Direct focused ion beam (FIB) is presented as a method for patterning of CoSi2 silicide structures on a silicon surface. This technique allows the fabrication of submicron structures without the use of resist-based Lithography methods.

Original languageEnglish (US)
Pages (from-to)2525-2528
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number6
DOIs
StatePublished - Nov 2001

Fingerprint

Focused ion beams
barrier layers
Lithography
implantation
lithography
ion beams
Fabrication
Silicon
fabrication
silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Direct patterning of nanometer-scale silicide structures by focused ion-beam implantation through a thin barrier layer",
abstract = "Direct focused ion beam (FIB) is presented as a method for patterning of CoSi2 silicide structures on a silicon surface. This technique allows the fabrication of submicron structures without the use of resist-based Lithography methods.",
author = "Mitan, {M. M.} and Pivin, {D. P.} and Terry Alford and Mayer, {J. W.}",
year = "2001",
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number = "6",

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AU - Alford, Terry

AU - Mayer, J. W.

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JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

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