Direct patterning of nanometer-scale silicide structures by focused ion-beam implantation through a thin barrier layer

M. M. Mitan, D. P. Pivin, Terry Alford, J. W. Mayer

Research output: Contribution to journalArticle

5 Scopus citations


Direct focused ion beam (FIB) is presented as a method for patterning of CoSi2 silicide structures on a silicon surface. This technique allows the fabrication of submicron structures without the use of resist-based Lithography methods.

Original languageEnglish (US)
Pages (from-to)2525-2528
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number6
StatePublished - Nov 1 2001


ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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