Direct observation of voltage barriers in ZnO varistors

O. L. Krivanek; P. Williams; Yi Ching Lin

doi:10.1063/1.90651

Direct observation of voltage barriers in ZnO varistors

O. L. Krivanek, P. Williams, Yi Ching Lin

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Voltage barriers in a ZnO varistor have been imaged by voltage-contrast scanning electron microscopy. They are due to grain boundaries and are capable of supporting voltage differences of up to about 4 V.

Original language	English (US)
Pages (from-to)	805-806
Number of pages	2
Journal	Applied Physics Letters
Volume	34
Issue number	11
DOIs	https://doi.org/10.1063/1.90651
State	Published - 1979
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Direct observation of voltage barriers in ZnO varistors",

abstract = "Voltage barriers in a ZnO varistor have been imaged by voltage-contrast scanning electron microscopy. They are due to grain boundaries and are capable of supporting voltage differences of up to about 4 V.",

author = "Krivanek, {O. L.} and P. Williams and Lin, {Yi Ching}",

year = "1979",

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Direct observation of voltage barriers in ZnO varistors

Abstract

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