Direct observation of voltage barriers in ZnO varistors

O. L. Krivanek, P. Williams, Yi Ching Lin

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

Voltage barriers in a ZnO varistor have been imaged by voltage-contrast scanning electron microscopy. They are due to grain boundaries and are capable of supporting voltage differences of up to about 4 V.

Original languageEnglish (US)
Pages (from-to)805-806
Number of pages2
JournalApplied Physics Letters
Volume34
Issue number11
DOIs
StatePublished - Dec 1 1979

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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