Direct observation of strained substrate in graded Si1-xGex/Si heterostructures

Meng Tao, J. W. Lyding

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Strain relaxation in a graded Si1-xGex/Si heterostructure was examined using cross-sectional scanning tunneling microscopy. Observed were two strain relaxation mechanisms on the (111) cleaved surface. One was observed by stressing the substrate, and the other through defect formation. This finding is analogous to misfit dislocations observed in bulk strain relaxation.

Original languageEnglish (US)
Pages (from-to)2020-2022
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number14
StatePublished - Apr 5 1999
Externally publishedYes

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scanning tunneling microscopy
defects

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Direct observation of strained substrate in graded Si1-xGex/Si heterostructures. / Tao, Meng; Lyding, J. W.

In: Applied Physics Letters, Vol. 74, No. 14, 05.04.1999, p. 2020-2022.

Research output: Contribution to journalArticle

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