Direct observation of strained substrate in graded Si1-xGex/Si heterostructures

M. Tao, J. W. Lyding

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Strain relaxation in a graded Si1-xGex/Si heterostructure was examined using cross-sectional scanning tunneling microscopy. Observed were two strain relaxation mechanisms on the (111) cleaved surface. One was observed by stressing the substrate, and the other through defect formation. This finding is analogous to misfit dislocations observed in bulk strain relaxation.

Original languageEnglish (US)
Pages (from-to)2020-2022
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number14
DOIs
StatePublished - Apr 5 1999
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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