Direct observation of strained substrate in graded Si1-xGex/Si heterostructures

M. Tao; J. W. Lyding

doi:10.1063/1.123743

Direct observation of strained substrate in graded Si_1-xGe_x/Si heterostructures

M. Tao, J. W. Lyding

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Strain relaxation in a graded Si_1-xGe_x/Si heterostructure was examined using cross-sectional scanning tunneling microscopy. Observed were two strain relaxation mechanisms on the (111) cleaved surface. One was observed by stressing the substrate, and the other through defect formation. This finding is analogous to misfit dislocations observed in bulk strain relaxation.

Original language	English (US)
Pages (from-to)	2020-2022
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	14
DOIs	https://doi.org/10.1063/1.123743
State	Published - Apr 5 1999
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.123743

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title = "Direct observation of strained substrate in graded Si1-xGex/Si heterostructures",

abstract = "Strain relaxation in a graded Si1-xGex/Si heterostructure was examined using cross-sectional scanning tunneling microscopy. Observed were two strain relaxation mechanisms on the (111) cleaved surface. One was observed by stressing the substrate, and the other through defect formation. This finding is analogous to misfit dislocations observed in bulk strain relaxation.",

author = "M. Tao and Lyding, {J. W.}",

year = "1999",

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doi = "10.1063/1.123743",

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AU - Tao, M.

AU - Lyding, J. W.

PY - 1999/4/5

Y1 - 1999/4/5

N2 - Strain relaxation in a graded Si1-xGex/Si heterostructure was examined using cross-sectional scanning tunneling microscopy. Observed were two strain relaxation mechanisms on the (111) cleaved surface. One was observed by stressing the substrate, and the other through defect formation. This finding is analogous to misfit dislocations observed in bulk strain relaxation.

AB - Strain relaxation in a graded Si1-xGex/Si heterostructure was examined using cross-sectional scanning tunneling microscopy. Observed were two strain relaxation mechanisms on the (111) cleaved surface. One was observed by stressing the substrate, and the other through defect formation. This finding is analogous to misfit dislocations observed in bulk strain relaxation.

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U2 - 10.1063/1.123743

DO - 10.1063/1.123743

M3 - Article

AN - SCOPUS:0032613766

SN - 0003-6951

VL - 74

SP - 2020

EP - 2022

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Direct observation of strained substrate in graded Si_1-xGe_x/Si heterostructures

Abstract

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