Direct observation of electron velocity overshoot in an InP p-i-n nanostructure semiconductor: A subpicosecond Raman probe

Kong-Thon Tsen, D. K. Ferry, Jye Shyang Wang, Chao Hsiung Huang, Hao Hsiung Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have studied transient electron transport in an InP p-i-n nanostructure semiconductor by subpicosecond Raman spectroscopy at T = 300 K. Both the non-equilibrium electron distribution and electron drift velocity in the regime of electron velocity overshoot have been directly measured. It is demonstrated that electron drift velocity in an InP p-i-n nanostructure is significantly larger than that in a GaAs p-i-n nanostructure sample, as a result of the larger central to satellite valley energy separation in InP.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsK.T. Tsen, H.R. Fetterman
Pages273-282
Number of pages10
Volume3277
DOIs
StatePublished - 1998
EventUltrafast Phenomena in Semiconductors II - San Jose, CA, United States
Duration: Jan 28 1998Jan 29 1998

Other

OtherUltrafast Phenomena in Semiconductors II
CountryUnited States
CitySan Jose, CA
Period1/28/981/29/98

Fingerprint

Nanostructures
Semiconductor materials
Electrons
probes
electrons
electron distribution
valleys
Raman spectroscopy
Satellites
energy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Tsen, K-T., Ferry, D. K., Wang, J. S., Huang, C. H., & Lin, H. H. (1998). Direct observation of electron velocity overshoot in an InP p-i-n nanostructure semiconductor: A subpicosecond Raman probe. In K. T. Tsen, & H. R. Fetterman (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3277, pp. 273-282) https://doi.org/10.1117/12.306165

Direct observation of electron velocity overshoot in an InP p-i-n nanostructure semiconductor : A subpicosecond Raman probe. / Tsen, Kong-Thon; Ferry, D. K.; Wang, Jye Shyang; Huang, Chao Hsiung; Lin, Hao Hsiung.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / K.T. Tsen; H.R. Fetterman. Vol. 3277 1998. p. 273-282.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tsen, K-T, Ferry, DK, Wang, JS, Huang, CH & Lin, HH 1998, Direct observation of electron velocity overshoot in an InP p-i-n nanostructure semiconductor: A subpicosecond Raman probe. in KT Tsen & HR Fetterman (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 3277, pp. 273-282, Ultrafast Phenomena in Semiconductors II, San Jose, CA, United States, 1/28/98. https://doi.org/10.1117/12.306165
Tsen K-T, Ferry DK, Wang JS, Huang CH, Lin HH. Direct observation of electron velocity overshoot in an InP p-i-n nanostructure semiconductor: A subpicosecond Raman probe. In Tsen KT, Fetterman HR, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3277. 1998. p. 273-282 https://doi.org/10.1117/12.306165
Tsen, Kong-Thon ; Ferry, D. K. ; Wang, Jye Shyang ; Huang, Chao Hsiung ; Lin, Hao Hsiung. / Direct observation of electron velocity overshoot in an InP p-i-n nanostructure semiconductor : A subpicosecond Raman probe. Proceedings of SPIE - The International Society for Optical Engineering. editor / K.T. Tsen ; H.R. Fetterman. Vol. 3277 1998. pp. 273-282
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