Direct observation of electron velocity overshoot in an InP p-i-n nanostructure semiconductor: A subpicosecond Raman probe

Kong-Thon Tsen, D. K. Ferry, Jye Shyang Wang, Chao Hsiung Huang, Hao Hsiung Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have studied transient electron transport in an InP p-i-n nanostructure semiconductor by subpicosecond Raman spectroscopy at T = 300 K. Both the non-equilibrium electron distribution and electron drift velocity in the regime of electron velocity overshoot have been directly measured. It is demonstrated that electron drift velocity in an InP p-i-n nanostructure is significantly larger than that in a GaAs p-i-n nanostructure sample, as a result of the larger central to satellite valley energy separation in InP.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsK.T. Tsen, H.R. Fetterman
Pages273-282
Number of pages10
Volume3277
DOIs
StatePublished - 1998
EventUltrafast Phenomena in Semiconductors II - San Jose, CA, United States
Duration: Jan 28 1998Jan 29 1998

Other

OtherUltrafast Phenomena in Semiconductors II
CountryUnited States
CitySan Jose, CA
Period1/28/981/29/98

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Tsen, K-T., Ferry, D. K., Wang, J. S., Huang, C. H., & Lin, H. H. (1998). Direct observation of electron velocity overshoot in an InP p-i-n nanostructure semiconductor: A subpicosecond Raman probe. In K. T. Tsen, & H. R. Fetterman (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3277, pp. 273-282) https://doi.org/10.1117/12.306165