Direct observation of electron velocity overshoot in an InP p-i-n nanostructure semiconductor. A subpicosecond Raman probe

Kong-Thon Tsen, D. K. Ferry, Jye Shyang Wang, Chao Hsiung Huang, Hao Hsiung Lin

Research output: Contribution to journalArticle

Abstract

We have studied the transient electron transport in an InP p-i-n nanostructure semiconductor by using subpicosecond Raman spectroscopy at T = 300 K. Both the non-equilibrium electron distribution and electron drift velocity in the regime of electron velocity overshoot have been directly measured. It is demonstrated that electron drift velocity in an InP p-i-n nanostructure is significantly larger than that in a GaAs p-i-n nanostructure sample, as a result of the larger central to satellite valley energy separation in InP.

Original languageEnglish (US)
Pages (from-to)117-120
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume204
Issue number1
DOIs
StatePublished - Nov 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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