Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

Daniel Zuo, Runyu Liu, Daniel Wasserman, James Mabon, Zhao Yu He, Shi Liu, Yong-Hang Zhang, Emil A. Kadlec, Benjamin V. Olson, Eric A. Shaner

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Abstract

We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures, we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 200 ns, with a vertical diffusivity of 3 × 10-2 cm2/s. We also report on the device's optical response characteristics at 78 K.

Original languageEnglish (US)
Article number071107
JournalApplied Physics Letters
Volume106
Issue number7
DOIs
StatePublished - Feb 16 2015

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Zuo, D., Liu, R., Wasserman, D., Mabon, J., He, Z. Y., Liu, S., Zhang, Y-H., Kadlec, E. A., Olson, B. V., & Shaner, E. A. (2015). Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors. Applied Physics Letters, 106(7), [071107]. https://doi.org/10.1063/1.4913312