Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

Daniel Zuo, Runyu Liu, Daniel Wasserman, James Mabon, Zhao Yu He, Shi Liu, Yong-Hang Zhang, Emil A. Kadlec, Benjamin V. Olson, Eric A. Shaner

Research output: Contribution to journalArticle

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Abstract

We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures, we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 200 ns, with a vertical diffusivity of 3 × 10-2 cm2/s. We also report on the device's optical response characteristics at 78 K.

Original languageEnglish (US)
Article number071107
JournalApplied Physics Letters
Volume106
Issue number7
DOIs
StatePublished - Feb 16 2015

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minority carriers
photometers
infrared detectors
barrier layers
carrier lifetime
diffusion length
dark current
diffusivity
absorbers
transport properties
electron beams
photoluminescence
liquids
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Zuo, D., Liu, R., Wasserman, D., Mabon, J., He, Z. Y., Liu, S., ... Shaner, E. A. (2015). Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors. Applied Physics Letters, 106(7), [071107]. https://doi.org/10.1063/1.4913312

Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors. / Zuo, Daniel; Liu, Runyu; Wasserman, Daniel; Mabon, James; He, Zhao Yu; Liu, Shi; Zhang, Yong-Hang; Kadlec, Emil A.; Olson, Benjamin V.; Shaner, Eric A.

In: Applied Physics Letters, Vol. 106, No. 7, 071107, 16.02.2015.

Research output: Contribution to journalArticle

Zuo, D, Liu, R, Wasserman, D, Mabon, J, He, ZY, Liu, S, Zhang, Y-H, Kadlec, EA, Olson, BV & Shaner, EA 2015, 'Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors', Applied Physics Letters, vol. 106, no. 7, 071107. https://doi.org/10.1063/1.4913312
Zuo, Daniel ; Liu, Runyu ; Wasserman, Daniel ; Mabon, James ; He, Zhao Yu ; Liu, Shi ; Zhang, Yong-Hang ; Kadlec, Emil A. ; Olson, Benjamin V. ; Shaner, Eric A. / Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors. In: Applied Physics Letters. 2015 ; Vol. 106, No. 7.
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