Direct measurements of electron-optical photon scattering rates in ultrathin GaAs-AlAs multiple quantum well structures

Kong-Thon Tsen, R. Joshi, H. Morkoç

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Electron-optical phonon scattering rates in ultrathin GaAs-AlAs multiple quantum well structures have been directly measured by using time-resolved Raman spectroscopy on a subpicosecond timescale. We have found that when the GaAs well width increases from 20 to 60 Å, electron-AlAs-like-optical phonon scattering rate decreases by a factor of about 3. The experimental results are explained with theoretical calculations of electron-optical phonon interactions recently carried out by K. Huang and B. Zhu [Phys. Rev. B 38, 13377 (1988)].

Original languageEnglish (US)
Pages (from-to)2075-2077
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number17
DOIs
StatePublished - Dec 1 1993

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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