Abstract
Raman scattering experiments on silicon-doped GaN show that donor impurities quench the A1(LO) Raman line at 735 cm -1. This is due to interaction between lattice vibrations and the free carrier plasma. The spatial variation of the A1(LO) signal has been imaged directly using newly developed instrumentation. Features with dimension under on micron are observed in faceted GaN crystallites. The variation in free carrier concentration is attributed to preferential incorporation of donor impurities during growth.
Original language | English (US) |
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Title of host publication | Materials Research Society Symposium - Proceedings |
Editors | F.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar |
Publisher | Materials Research Society |
Pages | 731-736 |
Number of pages | 6 |
Volume | 449 |
State | Published - 1997 |
Externally published | Yes |
Event | Proceedings of the 1996 MRS Fall Symposium - Boston, MA, USA Duration: Dec 2 1996 → Dec 6 1996 |
Other
Other | Proceedings of the 1996 MRS Fall Symposium |
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City | Boston, MA, USA |
Period | 12/2/96 → 12/6/96 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials