Direct imaging of impurity-induced Raman scattering in GaN

F. A. Ponce, J. W. Steeds, C. D. Dyer, G. D. Pitt

Research output: Contribution to journalArticle

58 Scopus citations

Abstract

The donor impurity distribution in a GaN epitaxial layer was studied using Raman imaging. The A 1 (LO) Raman line at 735 cm-1 is found to be inversely correlated to the presence of silicon in GaN due to phonon interaction with the free carrier plasma associated with donor impurities in the material The spatial variation of the A 1 (LO) signal was imaged directly using newly developed instrumentation. Features with dimension of about 0.5 μm are observed in faceted GaN crystallites. This variation in free carrier concentration is attributed to preferential donor impurity incorporation during growth.

Original languageEnglish (US)
Pages (from-to)2650-2652
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number18
DOIs
StatePublished - Oct 28 1996
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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