Direct imaging of impurity-induced Raman scattering in GaN

F. A. Ponce; J. W. Steeds; C. D. Dyer; G. D. Pitt

doi:10.1063/1.117547

Direct imaging of impurity-induced Raman scattering in GaN

F. A. Ponce, J. W. Steeds, C. D. Dyer, G. D. Pitt

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62 Scopus citations

Abstract

The donor impurity distribution in a GaN epitaxial layer was studied using Raman imaging. The A 1 (LO) Raman line at 735 cm^-1 is found to be inversely correlated to the presence of silicon in GaN due to phonon interaction with the free carrier plasma associated with donor impurities in the material The spatial variation of the A 1 (LO) signal was imaged directly using newly developed instrumentation. Features with dimension of about 0.5 μm are observed in faceted GaN crystallites. This variation in free carrier concentration is attributed to preferential donor impurity incorporation during growth.

Original language	English (US)
Pages (from-to)	2650-2652
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	18
DOIs	https://doi.org/10.1063/1.117547
State	Published - Oct 28 1996
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Direct imaging of impurity-induced Raman scattering in GaN",

abstract = "The donor impurity distribution in a GaN epitaxial layer was studied using Raman imaging. The A 1 (LO) Raman line at 735 cm-1 is found to be inversely correlated to the presence of silicon in GaN due to phonon interaction with the free carrier plasma associated with donor impurities in the material The spatial variation of the A 1 (LO) signal was imaged directly using newly developed instrumentation. Features with dimension of about 0.5 μm are observed in faceted GaN crystallites. This variation in free carrier concentration is attributed to preferential donor impurity incorporation during growth.",

author = "Ponce, {F. A.} and Steeds, {J. W.} and Dyer, {C. D.} and Pitt, {G. D.}",

year = "1996",

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AU - Ponce, F. A.

AU - Steeds, J. W.

AU - Dyer, C. D.

AU - Pitt, G. D.

PY - 1996/10/28

Y1 - 1996/10/28

N2 - The donor impurity distribution in a GaN epitaxial layer was studied using Raman imaging. The A 1 (LO) Raman line at 735 cm-1 is found to be inversely correlated to the presence of silicon in GaN due to phonon interaction with the free carrier plasma associated with donor impurities in the material The spatial variation of the A 1 (LO) signal was imaged directly using newly developed instrumentation. Features with dimension of about 0.5 μm are observed in faceted GaN crystallites. This variation in free carrier concentration is attributed to preferential donor impurity incorporation during growth.

AB - The donor impurity distribution in a GaN epitaxial layer was studied using Raman imaging. The A 1 (LO) Raman line at 735 cm-1 is found to be inversely correlated to the presence of silicon in GaN due to phonon interaction with the free carrier plasma associated with donor impurities in the material The spatial variation of the A 1 (LO) signal was imaged directly using newly developed instrumentation. Features with dimension of about 0.5 μm are observed in faceted GaN crystallites. This variation in free carrier concentration is attributed to preferential donor impurity incorporation during growth.

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JF - Applied Physics Letters

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Direct imaging of impurity-induced Raman scattering in GaN

Abstract

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