Direct imaging of anisotropic minority-carrier diffusion in ordered GaInP

N. M. Haegel, T. J. Mills, M. Talmadge, C. Scandrett, C. L. Frenzen, H. Yoon, C. M. Fetzer, R. R. King

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Abstract

An all-optical technique has been used to provide the first direct measurement of anisotropic minority-carrier diffusion in an ordered alloy of GaInP. Direct imaging of the minority-carrier diffusion distribution resulting from generation at a quasipoint source is obtained using an optical microscope coupled to a scanning electron microscope. Minority-carrier diffusion lengths ranging from 3 to 60 μm are measured by this technique in double heterostructures of GaInP, GaAs, and GaInAs, providing a key parameter of interest to the performance of state-of-the-art triple junction solar cells. Here we show a direct measurement of anisotropy in minority-carrier mobility in ordered GaInP, which is evident in the oval-shaped distribution of the recombination luminescence. A factor of 1.6 increase in minority electron mobility along the [110] major axis is reported.

Original languageEnglish (US)
Article number023711
JournalJournal of Applied Physics
Volume105
Issue number2
DOIs
StatePublished - Feb 9 2009
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Haegel, N. M., Mills, T. J., Talmadge, M., Scandrett, C., Frenzen, C. L., Yoon, H., Fetzer, C. M., & King, R. R. (2009). Direct imaging of anisotropic minority-carrier diffusion in ordered GaInP. Journal of Applied Physics, 105(2), [023711]. https://doi.org/10.1063/1.3068196