Direct-gap photoluminescence with tunable emission wavelength in Ge 1-y Sny alloys on silicon

J. Mathews, R. T. Beeler, J. Tolle, C. Xu, R. Roucka, John Kouvetakis, Jose Menendez

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Abstract

Direct-gap photoluminescence has been observed at room temperature in Ge1-y Sny alloys grown on (001) Si substrates. The emission wavelength is tunable over a 90 meV (200 nm) range by increasing the Sn concentration from y=0 to y=0.03. A weaker feature at lower energy is assigned to the indirect gap transitions, and the separation between the direct and indirect emission peaks is found to decrease as a function of y, as expected for these alloys. These results suggest that Ge1-y Sny alloys represent an attractive alternative to Ge for the fabrication of laser devices on Si.

Original languageEnglish (US)
Article number221912
JournalApplied Physics Letters
Volume97
Issue number22
DOIs
StatePublished - Nov 29 2010

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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