Direct gap photoluminescence and electroluminescence in Ge 1-ySny alloys

Radek Roucka, J. Mathews, Jose Menendez, John Kouvetakis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Direct-gap photoluminescence and electroluminescence has been observed in Ge1-ySny alloys. The emission in both cases is dominated by direct transitions exhibiting the expected compositional dependence. The data are consistent with the expected reduction of the Γ-L separation.

Original languageEnglish (US)
Title of host publicationIEEE International Conference on Group IV Photonics GFP
Pages214-216
Number of pages3
DOIs
StatePublished - 2011
Event8th IEEE International Conference on Group IV Photonics, GFP 2011 - London, United Kingdom
Duration: Sep 14 2011Sep 16 2011

Other

Other8th IEEE International Conference on Group IV Photonics, GFP 2011
CountryUnited Kingdom
CityLondon
Period9/14/119/16/11

Fingerprint

Electroluminescence
Photoluminescence

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Roucka, R., Mathews, J., Menendez, J., & Kouvetakis, J. (2011). Direct gap photoluminescence and electroluminescence in Ge 1-ySny alloys. In IEEE International Conference on Group IV Photonics GFP (pp. 214-216). [6053767] https://doi.org/10.1109/GROUP4.2011.6053767

Direct gap photoluminescence and electroluminescence in Ge 1-ySny alloys. / Roucka, Radek; Mathews, J.; Menendez, Jose; Kouvetakis, John.

IEEE International Conference on Group IV Photonics GFP. 2011. p. 214-216 6053767.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Roucka, R, Mathews, J, Menendez, J & Kouvetakis, J 2011, Direct gap photoluminescence and electroluminescence in Ge 1-ySny alloys. in IEEE International Conference on Group IV Photonics GFP., 6053767, pp. 214-216, 8th IEEE International Conference on Group IV Photonics, GFP 2011, London, United Kingdom, 9/14/11. https://doi.org/10.1109/GROUP4.2011.6053767
Roucka R, Mathews J, Menendez J, Kouvetakis J. Direct gap photoluminescence and electroluminescence in Ge 1-ySny alloys. In IEEE International Conference on Group IV Photonics GFP. 2011. p. 214-216. 6053767 https://doi.org/10.1109/GROUP4.2011.6053767
Roucka, Radek ; Mathews, J. ; Menendez, Jose ; Kouvetakis, John. / Direct gap photoluminescence and electroluminescence in Ge 1-ySny alloys. IEEE International Conference on Group IV Photonics GFP. 2011. pp. 214-216
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