Direct gap photoluminescence and electroluminescence in Ge 1-ySny alloys

Radek Roucka, J. Mathews, Jose Menendez, John Kouvetakis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Direct-gap photoluminescence and electroluminescence has been observed in Ge1-ySny alloys. The emission in both cases is dominated by direct transitions exhibiting the expected compositional dependence. The data are consistent with the expected reduction of the Γ-L separation.

Original languageEnglish (US)
Title of host publication8th IEEE International Conference on Group IV Photonics, GFP 2011
Pages214-216
Number of pages3
DOIs
StatePublished - Nov 22 2011
Event8th IEEE International Conference on Group IV Photonics, GFP 2011 - London, United Kingdom
Duration: Sep 14 2011Sep 16 2011

Publication series

NameIEEE International Conference on Group IV Photonics GFP
ISSN (Print)1949-2081

Other

Other8th IEEE International Conference on Group IV Photonics, GFP 2011
CountryUnited Kingdom
CityLondon
Period9/14/119/16/11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Roucka, R., Mathews, J., Menendez, J., & Kouvetakis, J. (2011). Direct gap photoluminescence and electroluminescence in Ge 1-ySny alloys. In 8th IEEE International Conference on Group IV Photonics, GFP 2011 (pp. 214-216). [6053767] (IEEE International Conference on Group IV Photonics GFP). https://doi.org/10.1109/GROUP4.2011.6053767