Direct gap group IV semiconductors for next generation Si-based IR photonics

John Kouvetakis, James Gallagher, Jose Menendez

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents synthesis and optical properties of mono-crystalline Ge 1-ySn y and Ge 1-x-ySi xSn y semiconductor alloys grown on Si/Ge platforms via purposely designed CVD routes using highly reactive Si/Ge/Sn hydrides including Ge 3H 8, Ge 4H 10, Si 4H 10 and SnD 4. The Ge 1-ySn y materials are shown to exhibit strong and tunable photoluminescence induced by the substitution of sizable Sn concentrations in the Ge diamond lattice ultimately leading to an indirect-to-direct band gap crossover at y= 0.08-0.09. The optical data indicate that the IR coverage of the alloy extends well beyond that of elemental Ge into the broader long wavelength range suggesting a variety of applications in Si-based photonics. Ge 1-x-ySi xSn y alloys represent the first viable ternary semiconductor among group IV elements with independently tunable lattice parameter and electronic structure. Studies of the compositional dependence of direct and indirect edges in these alloys using photoluminescence and photocurrent measurements are reviewed. The optical results show band gap variation over a wide range above and below that of Ge from 1.1 to 0.5 eV and provide the first demonstration of direct gap behavior in this semiconductor system.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherMaterials Research Society
Volume1666
DOIs
StatePublished - 2014
Event2014 MRS Spring Meeting - San Francisco, United States
Duration: Apr 21 2014Apr 25 2014

Other

Other2014 MRS Spring Meeting
CountryUnited States
CitySan Francisco
Period4/21/144/25/14

Fingerprint

Photonics
photonics
Semiconductor materials
Photoluminescence
Energy gap
photoluminescence
Diamond
Photocurrents
Hydrides
Lattice constants
hydrides
Electronic structure
photocurrents
Chemical vapor deposition
lattice parameters
Diamonds
crossovers
Substitution reactions
Demonstrations
platforms

Keywords

  • photoconductivity
  • photoemission
  • semiconducting

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Kouvetakis, J., Gallagher, J., & Menendez, J. (2014). Direct gap group IV semiconductors for next generation Si-based IR photonics. In Materials Research Society Symposium Proceedings (Vol. 1666). Materials Research Society. https://doi.org/10.1557/opl.2014.666

Direct gap group IV semiconductors for next generation Si-based IR photonics. / Kouvetakis, John; Gallagher, James; Menendez, Jose.

Materials Research Society Symposium Proceedings. Vol. 1666 Materials Research Society, 2014.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kouvetakis, J, Gallagher, J & Menendez, J 2014, Direct gap group IV semiconductors for next generation Si-based IR photonics. in Materials Research Society Symposium Proceedings. vol. 1666, Materials Research Society, 2014 MRS Spring Meeting, San Francisco, United States, 4/21/14. https://doi.org/10.1557/opl.2014.666
Kouvetakis J, Gallagher J, Menendez J. Direct gap group IV semiconductors for next generation Si-based IR photonics. In Materials Research Society Symposium Proceedings. Vol. 1666. Materials Research Society. 2014 https://doi.org/10.1557/opl.2014.666
Kouvetakis, John ; Gallagher, James ; Menendez, Jose. / Direct gap group IV semiconductors for next generation Si-based IR photonics. Materials Research Society Symposium Proceedings. Vol. 1666 Materials Research Society, 2014.
@inproceedings{e705f65b1a184864add56059f28fadbb,
title = "Direct gap group IV semiconductors for next generation Si-based IR photonics",
abstract = "This paper presents synthesis and optical properties of mono-crystalline Ge 1-ySn y and Ge 1-x-ySi xSn y semiconductor alloys grown on Si/Ge platforms via purposely designed CVD routes using highly reactive Si/Ge/Sn hydrides including Ge 3H 8, Ge 4H 10, Si 4H 10 and SnD 4. The Ge 1-ySn y materials are shown to exhibit strong and tunable photoluminescence induced by the substitution of sizable Sn concentrations in the Ge diamond lattice ultimately leading to an indirect-to-direct band gap crossover at y= 0.08-0.09. The optical data indicate that the IR coverage of the alloy extends well beyond that of elemental Ge into the broader long wavelength range suggesting a variety of applications in Si-based photonics. Ge 1-x-ySi xSn y alloys represent the first viable ternary semiconductor among group IV elements with independently tunable lattice parameter and electronic structure. Studies of the compositional dependence of direct and indirect edges in these alloys using photoluminescence and photocurrent measurements are reviewed. The optical results show band gap variation over a wide range above and below that of Ge from 1.1 to 0.5 eV and provide the first demonstration of direct gap behavior in this semiconductor system.",
keywords = "photoconductivity, photoemission, semiconducting",
author = "John Kouvetakis and James Gallagher and Jose Menendez",
year = "2014",
doi = "10.1557/opl.2014.666",
language = "English (US)",
volume = "1666",
booktitle = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",

}

TY - GEN

T1 - Direct gap group IV semiconductors for next generation Si-based IR photonics

AU - Kouvetakis, John

AU - Gallagher, James

AU - Menendez, Jose

PY - 2014

Y1 - 2014

N2 - This paper presents synthesis and optical properties of mono-crystalline Ge 1-ySn y and Ge 1-x-ySi xSn y semiconductor alloys grown on Si/Ge platforms via purposely designed CVD routes using highly reactive Si/Ge/Sn hydrides including Ge 3H 8, Ge 4H 10, Si 4H 10 and SnD 4. The Ge 1-ySn y materials are shown to exhibit strong and tunable photoluminescence induced by the substitution of sizable Sn concentrations in the Ge diamond lattice ultimately leading to an indirect-to-direct band gap crossover at y= 0.08-0.09. The optical data indicate that the IR coverage of the alloy extends well beyond that of elemental Ge into the broader long wavelength range suggesting a variety of applications in Si-based photonics. Ge 1-x-ySi xSn y alloys represent the first viable ternary semiconductor among group IV elements with independently tunable lattice parameter and electronic structure. Studies of the compositional dependence of direct and indirect edges in these alloys using photoluminescence and photocurrent measurements are reviewed. The optical results show band gap variation over a wide range above and below that of Ge from 1.1 to 0.5 eV and provide the first demonstration of direct gap behavior in this semiconductor system.

AB - This paper presents synthesis and optical properties of mono-crystalline Ge 1-ySn y and Ge 1-x-ySi xSn y semiconductor alloys grown on Si/Ge platforms via purposely designed CVD routes using highly reactive Si/Ge/Sn hydrides including Ge 3H 8, Ge 4H 10, Si 4H 10 and SnD 4. The Ge 1-ySn y materials are shown to exhibit strong and tunable photoluminescence induced by the substitution of sizable Sn concentrations in the Ge diamond lattice ultimately leading to an indirect-to-direct band gap crossover at y= 0.08-0.09. The optical data indicate that the IR coverage of the alloy extends well beyond that of elemental Ge into the broader long wavelength range suggesting a variety of applications in Si-based photonics. Ge 1-x-ySi xSn y alloys represent the first viable ternary semiconductor among group IV elements with independently tunable lattice parameter and electronic structure. Studies of the compositional dependence of direct and indirect edges in these alloys using photoluminescence and photocurrent measurements are reviewed. The optical results show band gap variation over a wide range above and below that of Ge from 1.1 to 0.5 eV and provide the first demonstration of direct gap behavior in this semiconductor system.

KW - photoconductivity

KW - photoemission

KW - semiconducting

UR - http://www.scopus.com/inward/record.url?scp=84926316955&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84926316955&partnerID=8YFLogxK

U2 - 10.1557/opl.2014.666

DO - 10.1557/opl.2014.666

M3 - Conference contribution

AN - SCOPUS:84926316955

VL - 1666

BT - Materials Research Society Symposium Proceedings

PB - Materials Research Society

ER -