Direct gap electroluminescence from Si/Ge1-y Sny p-i-n heterostructure diodes

R. Roucka, J. Mathews, R. T. Beeler, J. Tolle, John Kouvetakis, Jose Menendez

Research output: Contribution to journalArticle

85 Citations (Scopus)

Abstract

Electroluminescence spectra from Si/Ge1-y Sny heterostructure diodes are reported. The observed emission is dominated by direct gap optical transitions and displays the expected compositional dependence of the peak energy. Weaker indirect gap emission is also observed, and their energies are consistent with a closing of the indirect-direct separation as the Sn concentration is increased. The intensity of the EL spectra shows a superlinear dependence on the injection current, which is modeled using a Van Roosbroeck-Shockley expression for the emission intensity. The model assumes quasiequilibrium conditions for the electrons populating the different valleys in the conduction band of Ge.

Original languageEnglish (US)
Article number061109
JournalApplied Physics Letters
Volume98
Issue number6
DOIs
StatePublished - Feb 7 2011

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p-i-n diodes
electroluminescence
closing
optical transition
valleys
conduction bands
diodes
injection
energy
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Direct gap electroluminescence from Si/Ge1-y Sny p-i-n heterostructure diodes. / Roucka, R.; Mathews, J.; Beeler, R. T.; Tolle, J.; Kouvetakis, John; Menendez, Jose.

In: Applied Physics Letters, Vol. 98, No. 6, 061109, 07.02.2011.

Research output: Contribution to journalArticle

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