Direct bandgap electroluminescence from SiGeSn/GeSn double-heterostructure monolithically grown on Si

Yiyin Zhou, Yuanhao Miao, Solomon Ojo, Grey Abernathy, Wei Du, Greg Sun, Richard Soref, Jifeng Liu, Yong Hang Zhang, Mansour Mortazavi, Baohua Li, Shui Qing Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electroluminescence from direct bandgap GeSn double-heterostructure light-emitting diodes grown on Si is presented. Using SiGeSn as the barrier provides better carrier confinement compared GeSn barrier, as evidenced by enhanced emission intensity.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2020
PublisherOSA - The Optical Society
ISBN (Electronic)9781557528209
DOIs
StatePublished - 2020
EventCLEO: Science and Innovations, CLEO_SI 2020 - Washington, United States
Duration: May 10 2020May 15 2020

Publication series

NameOptics InfoBase Conference Papers
VolumePart F183-CLEO-SI 2020

Conference

ConferenceCLEO: Science and Innovations, CLEO_SI 2020
Country/TerritoryUnited States
CityWashington
Period5/10/205/15/20

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

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