Direct bandgap electroluminescence from SiGeSn/GeSn double-heterostructure monolithically grown on Si

Yiyin Zhou; Yuanhao Miao; Solomon Ojo; Grey Abernathy; Wei Du; Greg Sun; Richard Soref; Jifeng Liu; Yong Hang Zhang; Mansour Mortazavi; Baohua Li; Shui Qing Yu

doi:10.1364/CLEO_SI.2020.SM3M.4

Direct bandgap electroluminescence from SiGeSn/GeSn double-heterostructure monolithically grown on Si

Yiyin Zhou, Yuanhao Miao, Solomon Ojo, Grey Abernathy, Wei Du, Greg Sun, Richard Soref, Jifeng Liu, Yong Hang Zhang, Mansour Mortazavi, Baohua Li, Shui Qing Yu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Electroluminescence from direct bandgap GeSn double-heterostructure light-emitting diodes grown on Si is presented. Using SiGeSn as the barrier provides better carrier confinement compared GeSn barrier, as evidenced by enhanced emission intensity.

Original language	English (US)
Title of host publication	CLEO
Subtitle of host publication	Science and Innovations, CLEO_SI 2020
Publisher	Optica Publishing Group (formerly OSA)
ISBN (Print)	9781943580767
DOIs	https://doi.org/10.1364/CLEO_SI.2020.SM3M.4
State	Published - 2020
Event	CLEO: Science and Innovations, CLEO_SI 2020 - Washington, United States Duration: May 10 2020 → May 15 2020

Publication series

Name	Optics InfoBase Conference Papers
Volume	Part F183-CLEO-SI 2020
ISSN (Electronic)	2162-2701

Conference

Conference	CLEO: Science and Innovations, CLEO_SI 2020
Country/Territory	United States
City	Washington
Period	5/10/20 → 5/15/20

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Mechanics of Materials

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10.1364/CLEO_SI.2020.SM3M.4

Cite this

Zhou, Y., Miao, Y., Ojo, S., Abernathy, G., Du, W., Sun, G., Soref, R., Liu, J., Zhang, Y. H., Mortazavi, M., Li, B., & Yu, S. Q. (2020). Direct bandgap electroluminescence from SiGeSn/GeSn double-heterostructure monolithically grown on Si. In CLEO: Science and Innovations, CLEO_SI 2020 Article SM3M.4 (Optics InfoBase Conference Papers; Vol. Part F183-CLEO-SI 2020). Optica Publishing Group (formerly OSA). https://doi.org/10.1364/CLEO_SI.2020.SM3M.4

Direct bandgap electroluminescence from SiGeSn/GeSn double-heterostructure monolithically grown on Si. / Zhou, Yiyin; Miao, Yuanhao; Ojo, Solomon et al.
CLEO: Science and Innovations, CLEO_SI 2020. Optica Publishing Group (formerly OSA), 2020. SM3M.4 (Optics InfoBase Conference Papers; Vol. Part F183-CLEO-SI 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhou, Y, Miao, Y, Ojo, S, Abernathy, G, Du, W, Sun, G, Soref, R, Liu, J, Zhang, YH, Mortazavi, M, Li, B & Yu, SQ 2020, Direct bandgap electroluminescence from SiGeSn/GeSn double-heterostructure monolithically grown on Si. in CLEO: Science and Innovations, CLEO_SI 2020., SM3M.4, Optics InfoBase Conference Papers, vol. Part F183-CLEO-SI 2020, Optica Publishing Group (formerly OSA), CLEO: Science and Innovations, CLEO_SI 2020, Washington, United States, 5/10/20. https://doi.org/10.1364/CLEO_SI.2020.SM3M.4

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title = "Direct bandgap electroluminescence from SiGeSn/GeSn double-heterostructure monolithically grown on Si",

abstract = "Electroluminescence from direct bandgap GeSn double-heterostructure light-emitting diodes grown on Si is presented. Using SiGeSn as the barrier provides better carrier confinement compared GeSn barrier, as evidenced by enhanced emission intensity.",

author = "Yiyin Zhou and Yuanhao Miao and Solomon Ojo and Grey Abernathy and Wei Du and Greg Sun and Richard Soref and Jifeng Liu and Zhang, {Yong Hang} and Mansour Mortazavi and Baohua Li and Yu, {Shui Qing}",

note = "Publisher Copyright: {\textcopyright} OSA 2020 {\textcopyright} 2020 The Author(s); CLEO: Science and Innovations, CLEO_SI 2020 ; Conference date: 10-05-2020 Through 15-05-2020",

year = "2020",

doi = "10.1364/CLEO_SI.2020.SM3M.4",

language = "English (US)",

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AU - Zhou, Yiyin

AU - Miao, Yuanhao

AU - Ojo, Solomon

AU - Abernathy, Grey

AU - Du, Wei

AU - Sun, Greg

AU - Soref, Richard

AU - Liu, Jifeng

AU - Zhang, Yong Hang

AU - Mortazavi, Mansour

AU - Li, Baohua

AU - Yu, Shui Qing

PY - 2020

Y1 - 2020

N2 - Electroluminescence from direct bandgap GeSn double-heterostructure light-emitting diodes grown on Si is presented. Using SiGeSn as the barrier provides better carrier confinement compared GeSn barrier, as evidenced by enhanced emission intensity.

AB - Electroluminescence from direct bandgap GeSn double-heterostructure light-emitting diodes grown on Si is presented. Using SiGeSn as the barrier provides better carrier confinement compared GeSn barrier, as evidenced by enhanced emission intensity.

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U2 - 10.1364/CLEO_SI.2020.SM3M.4

DO - 10.1364/CLEO_SI.2020.SM3M.4

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AN - SCOPUS:85095452614

SN - 9781943580767

T3 - Optics InfoBase Conference Papers

BT - CLEO

PB - Optica Publishing Group (formerly OSA)

T2 - CLEO: Science and Innovations, CLEO_SI 2020

Y2 - 10 May 2020 through 15 May 2020

ER -

Direct bandgap electroluminescence from SiGeSn/GeSn double-heterostructure monolithically grown on Si

Abstract

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Conference

ASJC Scopus subject areas

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