Direct absorption edge in GeSiSn alloys

V. R. D'Costa, Y. Y. Fang, J. Tolle, John Kouvetakis, Jose Menendez

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

The lowest direct absorption edge E0 in ternary Ge 1-x-ySixSny alloys was measured in films grown lattice-matched to Ge using spectroscopic ellipsometry and photoreflectance. The sample choice is dictated by possible applications of Ge1-x-ySi xSny in photovoltaics as the long-sought ∼1 eV gap material to complement Ge/InGaAs/InGaP multijunctions. The compositional dependence of the E0 transition is analyzed in detail.

Original languageEnglish (US)
Title of host publicationPhysics of Semiconductors - 29th International Conference, ICPS 29
Pages39-40
Number of pages2
DOIs
StatePublished - Dec 1 2009
Event29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil
Duration: Jul 27 2008Aug 1 2008

Publication series

NameAIP Conference Proceedings
Volume1199
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other29th International Conference on Physics of Semiconductors, ICPS 29
CountryBrazil
CityRio de Janeiro
Period7/27/088/1/08

Keywords

  • Optical properties
  • Semiconductors

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    D'Costa, V. R., Fang, Y. Y., Tolle, J., Kouvetakis, J., & Menendez, J. (2009). Direct absorption edge in GeSiSn alloys. In Physics of Semiconductors - 29th International Conference, ICPS 29 (pp. 39-40). (AIP Conference Proceedings; Vol. 1199). https://doi.org/10.1063/1.3295471