Direct absorption edge in GeSiSn alloys

V. R. D'Costa; Y. Y. Fang; J. Tolle; John Kouvetakis; Jose Menendez

doi:10.1063/1.3295471

Direct absorption edge in GeSiSn alloys

V. R. D'Costa, Y. Y. Fang, J. Tolle, John Kouvetakis, Jose Menendez

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

The lowest direct absorption edge E₀ in ternary Ge _1-x-ySi_xSn_y alloys was measured in films grown lattice-matched to Ge using spectroscopic ellipsometry and photoreflectance. The sample choice is dictated by possible applications of Ge_1-x-ySi _xSn_y in photovoltaics as the long-sought ∼1 eV gap material to complement Ge/InGaAs/InGaP multijunctions. The compositional dependence of the E₀ transition is analyzed in detail.

Original language	English (US)
Title of host publication	Physics of Semiconductors - 29th International Conference, ICPS 29
Pages	39-40
Number of pages	2
DOIs	https://doi.org/10.1063/1.3295471
State	Published - 2009
Event	29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil Duration: Jul 27 2008 → Aug 1 2008

Publication series

Name	AIP Conference Proceedings
Volume	1199
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	29th International Conference on Physics of Semiconductors, ICPS 29
Country/Territory	Brazil
City	Rio de Janeiro
Period	7/27/08 → 8/1/08

Keywords

Optical properties
Semiconductors

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.3295471

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title = "Direct absorption edge in GeSiSn alloys",

abstract = "The lowest direct absorption edge E0 in ternary Ge 1-x-ySixSny alloys was measured in films grown lattice-matched to Ge using spectroscopic ellipsometry and photoreflectance. The sample choice is dictated by possible applications of Ge1-x-ySi xSny in photovoltaics as the long-sought ∼1 eV gap material to complement Ge/InGaAs/InGaP multijunctions. The compositional dependence of the E0 transition is analyzed in detail.",

keywords = "Optical properties, Semiconductors",

author = "D'Costa, {V. R.} and Fang, {Y. Y.} and J. Tolle and John Kouvetakis and Jose Menendez",

year = "2009",

doi = "10.1063/1.3295471",

language = "English (US)",

isbn = "9780735407367",

series = "AIP Conference Proceedings",

pages = "39--40",

booktitle = "Physics of Semiconductors - 29th International Conference, ICPS 29",

note = "29th International Conference on Physics of Semiconductors, ICPS 29 ; Conference date: 27-07-2008 Through 01-08-2008",

}

TY - GEN

T1 - Direct absorption edge in GeSiSn alloys

AU - D'Costa, V. R.

AU - Fang, Y. Y.

AU - Tolle, J.

AU - Kouvetakis, John

AU - Menendez, Jose

PY - 2009

Y1 - 2009

N2 - The lowest direct absorption edge E0 in ternary Ge 1-x-ySixSny alloys was measured in films grown lattice-matched to Ge using spectroscopic ellipsometry and photoreflectance. The sample choice is dictated by possible applications of Ge1-x-ySi xSny in photovoltaics as the long-sought ∼1 eV gap material to complement Ge/InGaAs/InGaP multijunctions. The compositional dependence of the E0 transition is analyzed in detail.

AB - The lowest direct absorption edge E0 in ternary Ge 1-x-ySixSny alloys was measured in films grown lattice-matched to Ge using spectroscopic ellipsometry and photoreflectance. The sample choice is dictated by possible applications of Ge1-x-ySi xSny in photovoltaics as the long-sought ∼1 eV gap material to complement Ge/InGaAs/InGaP multijunctions. The compositional dependence of the E0 transition is analyzed in detail.

KW - Optical properties

KW - Semiconductors

UR - http://www.scopus.com/inward/record.url?scp=74849132247&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=74849132247&partnerID=8YFLogxK

U2 - 10.1063/1.3295471

DO - 10.1063/1.3295471

M3 - Conference contribution

AN - SCOPUS:74849132247

SN - 9780735407367

T3 - AIP Conference Proceedings

SP - 39

EP - 40

BT - Physics of Semiconductors - 29th International Conference, ICPS 29

T2 - 29th International Conference on Physics of Semiconductors, ICPS 29

Y2 - 27 July 2008 through 1 August 2008

ER -

Direct absorption edge in GeSiSn alloys

Abstract

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Keywords

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