Direct absorption edge in GeSiSn alloys

V. R. D'Costa, Y. Y. Fang, J. Tolle, John Kouvetakis, Jose Menendez

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The lowest direct absorption edge E0 in ternary Ge 1-x-ySixSny alloys was measured in films grown lattice-matched to Ge using spectroscopic ellipsometry and photoreflectance. The sample choice is dictated by possible applications of Ge1-x-ySi xSny in photovoltaics as the long-sought ∼1 eV gap material to complement Ge/InGaAs/InGaP multijunctions. The compositional dependence of the E0 transition is analyzed in detail.

Original languageEnglish (US)
Title of host publicationAIP Conference Proceedings
Pages39-40
Number of pages2
Volume1199
DOIs
StatePublished - 2009
Event29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil
Duration: Jul 27 2008Aug 1 2008

Other

Other29th International Conference on Physics of Semiconductors, ICPS 29
CountryBrazil
CityRio de Janeiro
Period7/27/088/1/08

Fingerprint

complement
ellipsometry

Keywords

  • Optical properties
  • Semiconductors

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

D'Costa, V. R., Fang, Y. Y., Tolle, J., Kouvetakis, J., & Menendez, J. (2009). Direct absorption edge in GeSiSn alloys. In AIP Conference Proceedings (Vol. 1199, pp. 39-40) https://doi.org/10.1063/1.3295471

Direct absorption edge in GeSiSn alloys. / D'Costa, V. R.; Fang, Y. Y.; Tolle, J.; Kouvetakis, John; Menendez, Jose.

AIP Conference Proceedings. Vol. 1199 2009. p. 39-40.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

D'Costa, VR, Fang, YY, Tolle, J, Kouvetakis, J & Menendez, J 2009, Direct absorption edge in GeSiSn alloys. in AIP Conference Proceedings. vol. 1199, pp. 39-40, 29th International Conference on Physics of Semiconductors, ICPS 29, Rio de Janeiro, Brazil, 7/27/08. https://doi.org/10.1063/1.3295471
D'Costa VR, Fang YY, Tolle J, Kouvetakis J, Menendez J. Direct absorption edge in GeSiSn alloys. In AIP Conference Proceedings. Vol. 1199. 2009. p. 39-40 https://doi.org/10.1063/1.3295471
D'Costa, V. R. ; Fang, Y. Y. ; Tolle, J. ; Kouvetakis, John ; Menendez, Jose. / Direct absorption edge in GeSiSn alloys. AIP Conference Proceedings. Vol. 1199 2009. pp. 39-40
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