TY - GEN
T1 - Dilute nitride GaPNxas potential top cell candidate for Silicon based multijunction solar cells
AU - Murali, Srinath
AU - Chikhalkar, Abhinav
AU - Zhang, Chaomin
AU - King, Richard R.
AU - Honsberg, Christiana B.
N1 - Funding Information:
ACKNOWLEDGMENT This work was primarily supported by the Engineering Research Center (ERC) Program of the National Science Foundation (NSF) and the Office of Energy Efficiency and Renewable Energy of the Department of Energy (DOE) under NSF Cooperative Agreement No. EEC-1041895. We acknowledge the use of facilities within the Eyring Materials Center at Arizona State University supported in part by NHCI-ECCS-1542160.
Publisher Copyright:
© 2020 IEEE.
Copyright:
Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2020/6/14
Y1 - 2020/6/14
N2 - This work reports on the growth of dilute nitride GaPNx lattice-matched to Si as a pathway for Si-based multijunction solar cells. GaPNx layers were grown using a plasma assisted molecular beam epitaxy with varying N concentrations. High resolution X-Ray ray diffraction analysis revealed high structural quality of the grown thin-film layers including the successful integration of GaPNx with a GaP buffer layer on Si substrate. Low temperature photoluminescence spectroscopy results showed the peak position to be around 1.94eV at 100K for the lattice-matched case. This value is close to the ideal bandgap for independent connection with Si bottom cell in a tandem configuration.
AB - This work reports on the growth of dilute nitride GaPNx lattice-matched to Si as a pathway for Si-based multijunction solar cells. GaPNx layers were grown using a plasma assisted molecular beam epitaxy with varying N concentrations. High resolution X-Ray ray diffraction analysis revealed high structural quality of the grown thin-film layers including the successful integration of GaPNx with a GaP buffer layer on Si substrate. Low temperature photoluminescence spectroscopy results showed the peak position to be around 1.94eV at 100K for the lattice-matched case. This value is close to the ideal bandgap for independent connection with Si bottom cell in a tandem configuration.
KW - dilute nitride
KW - molecular beam epitaxy
KW - multijunction solar cell
UR - http://www.scopus.com/inward/record.url?scp=85099542106&partnerID=8YFLogxK
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U2 - 10.1109/PVSC45281.2020.9300955
DO - 10.1109/PVSC45281.2020.9300955
M3 - Conference contribution
AN - SCOPUS:85099542106
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 2017
EP - 2020
BT - 2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Y2 - 15 June 2020 through 21 August 2020
ER -