Dilute nitride GaPNxas potential top cell candidate for Silicon based multijunction solar cells

Srinath Murali, Abhinav Chikhalkar, Chaomin Zhang, Richard R. King, Christiana B. Honsberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work reports on the growth of dilute nitride GaPNx lattice-matched to Si as a pathway for Si-based multijunction solar cells. GaPNx layers were grown using a plasma assisted molecular beam epitaxy with varying N concentrations. High resolution X-Ray ray diffraction analysis revealed high structural quality of the grown thin-film layers including the successful integration of GaPNx with a GaP buffer layer on Si substrate. Low temperature photoluminescence spectroscopy results showed the peak position to be around 1.94eV at 100K for the lattice-matched case. This value is close to the ideal bandgap for independent connection with Si bottom cell in a tandem configuration.

Original languageEnglish (US)
Title of host publication2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2017-2020
Number of pages4
ISBN (Electronic)9781728161150
DOIs
StatePublished - Jun 14 2020
Event47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada
Duration: Jun 15 2020Aug 21 2020

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2020-June
ISSN (Print)0160-8371

Conference

Conference47th IEEE Photovoltaic Specialists Conference, PVSC 2020
CountryCanada
CityCalgary
Period6/15/208/21/20

Keywords

  • dilute nitride
  • molecular beam epitaxy
  • multijunction solar cell

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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