Abstract

Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different states due to efficient scattering with phonons, charged impurities, surface roughness and other electrons, so transport is scattering limited (diffusive) and well described by the Boltzmann transport equation. In this review, we present the theoretical framework used for the description and simulation of diffusive electron transport in quasi-two-dimensional and quasi-one-dimensional semiconductor structures. Transport in silicon MOSFETs and nanowires is presented in detail.

Original languageEnglish (US)
Pages (from-to)1725-1753
Number of pages29
JournalJournal of Computational and Theoretical Nanoscience
Volume6
Issue number8
DOIs
StatePublished - Oct 26 2009

    Fingerprint

Keywords

  • 2DEG
  • Boltzmann transport equation
  • Confined phonons
  • Diffusive transport
  • Monte carlo simulation
  • Nanostructures
  • Nanowires
  • Quantum confinement
  • Scattering
  • SiNW

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Computational Mathematics
  • Electrical and Electronic Engineering

Cite this