Abstract

Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different states due to efficient scattering with phonons, charged impurities, surface roughness and other electrons, so transport is scattering limited (diffusive) and well described by the Boltzmann transport equation. In this review, we present the theoretical framework used for the description and simulation of diffusive electron transport in quasi-two-dimensional and quasi-one-dimensional semiconductor structures. Transport in silicon MOSFETs and nanowires is presented in detail.

Original languageEnglish (US)
Pages (from-to)1725-1753
Number of pages29
JournalJournal of Computational and Theoretical Nanoscience
Volume6
Issue number8
DOIs
StatePublished - 2009

Fingerprint

Scattering
Electron
Semiconductor materials
Boltzmann transport equation
Electrons
Semiconductors
Silicon
Phonons
scattering
Boltzmann Transport Equation
Nanowires
surface roughness
phonons
nanowires
electrons
Electronic equipment
MOSFET
field effect transistors
Electron Transport
Surface roughness

Keywords

  • 2DEG
  • Boltzmann transport equation
  • Confined phonons
  • Diffusive transport
  • Monte carlo simulation
  • Nanostructures
  • Nanowires
  • Quantum confinement
  • Scattering
  • SiNW

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Computational Mathematics
  • Chemistry(all)

Cite this

Diffusive transport in quasi-2D and quasi-1D electron systems. / Knezevic, I.; Ramayya, E. B.; Vasileska, Dragica; Goodnick, Stephen.

In: Journal of Computational and Theoretical Nanoscience, Vol. 6, No. 8, 2009, p. 1725-1753.

Research output: Contribution to journalArticle

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