Abstract

In this work, we report on development of one-dimensional (1D) finite-difference and two-dimensional (2D) finite-element diffusion-reaction simulators to investigate mechanisms behind Cu-related metastabilities observed in CdTe solar cells [1]. The evolution of CdTe solar cells performance has been studied as a function of stress time in response to the evolution of associated acceptor and donor states. To achieve such capability, the simulators solve reaction-diffusion equations for the defect states in time-space domain self-consistently with the free carrier transport. Results of 1-D and 2-D simulations have been compared to verify the accuracy of solutions.

Original languageEnglish (US)
Title of host publication18th International Workshop on Computational Electronics, IWCE 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9780692515235
DOIs
StatePublished - Oct 19 2015
Event18th International Workshop on Computational Electronics, IWCE 2015 - West Lafayette, United States
Duration: Sep 2 2015Sep 4 2015

Other

Other18th International Workshop on Computational Electronics, IWCE 2015
CountryUnited States
CityWest Lafayette
Period9/2/159/4/15

Fingerprint

Solar cells
Simulators
Carrier transport
Defects

Keywords

  • Cadmium compounds
  • Finite difference methods
  • Finite element analysis
  • II-VI semiconductor materials
  • Mathematical model
  • Photovoltaic cells
  • Stress

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computational Mechanics
  • Electronic, Optical and Magnetic Materials

Cite this

Guo, D., Brinkman, D., Fang, T., Akis, R., Sankin, I., Vasileska, D., & Ringhofer, C. (2015). Diffusion-reaction modeling of Cu migration in CdTe solar devices. In 18th International Workshop on Computational Electronics, IWCE 2015 [7301962] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWCE.2015.7301962

Diffusion-reaction modeling of Cu migration in CdTe solar devices. / Guo, D.; Brinkman, D.; Fang, T.; Akis, R.; Sankin, I.; Vasileska, Dragica; Ringhofer, Christian.

18th International Workshop on Computational Electronics, IWCE 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7301962.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Guo, D, Brinkman, D, Fang, T, Akis, R, Sankin, I, Vasileska, D & Ringhofer, C 2015, Diffusion-reaction modeling of Cu migration in CdTe solar devices. in 18th International Workshop on Computational Electronics, IWCE 2015., 7301962, Institute of Electrical and Electronics Engineers Inc., 18th International Workshop on Computational Electronics, IWCE 2015, West Lafayette, United States, 9/2/15. https://doi.org/10.1109/IWCE.2015.7301962
Guo D, Brinkman D, Fang T, Akis R, Sankin I, Vasileska D et al. Diffusion-reaction modeling of Cu migration in CdTe solar devices. In 18th International Workshop on Computational Electronics, IWCE 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7301962 https://doi.org/10.1109/IWCE.2015.7301962
Guo, D. ; Brinkman, D. ; Fang, T. ; Akis, R. ; Sankin, I. ; Vasileska, Dragica ; Ringhofer, Christian. / Diffusion-reaction modeling of Cu migration in CdTe solar devices. 18th International Workshop on Computational Electronics, IWCE 2015. Institute of Electrical and Electronics Engineers Inc., 2015.
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