Diffusion-reaction modeling of Cu migration in CdTe solar devices

D. Guo; D. Brinkman; T. Fang; R. Akis; I. Sankin; Dragica Vasileska; Christian Ringhofer

doi:10.1109/IWCE.2015.7301962

Diffusion-reaction modeling of Cu migration in CdTe solar devices

D. Guo, D. Brinkman, T. Fang, R. Akis, I. Sankin, Dragica Vasileska, Christian Ringhofer

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this work, we report on development of one-dimensional (1D) finite-difference and two-dimensional (2D) finite-element diffusion-reaction simulators to investigate mechanisms behind Cu-related metastabilities observed in CdTe solar cells [1]. The evolution of CdTe solar cells performance has been studied as a function of stress time in response to the evolution of associated acceptor and donor states. To achieve such capability, the simulators solve reaction-diffusion equations for the defect states in time-space domain self-consistently with the free carrier transport. Results of 1-D and 2-D simulations have been compared to verify the accuracy of solutions.

Original language	English (US)
Title of host publication	18th International Workshop on Computational Electronics, IWCE 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9780692515235
DOIs	https://doi.org/10.1109/IWCE.2015.7301962
State	Published - Oct 19 2015
Event	18th International Workshop on Computational Electronics, IWCE 2015 - West Lafayette, United States Duration: Sep 2 2015 → Sep 4 2015

Other

Other	18th International Workshop on Computational Electronics, IWCE 2015
Country/Territory	United States
City	West Lafayette
Period	9/2/15 → 9/4/15

Keywords

Cadmium compounds
Finite difference methods
Finite element analysis
II-VI semiconductor materials
Mathematical model
Photovoltaic cells
Stress

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computational Mechanics
Electronic, Optical and Magnetic Materials

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10.1109/IWCE.2015.7301962

Cite this

Guo, D, Brinkman, D, Fang, T, Akis, R, Sankin, I, Vasileska, D & Ringhofer, C 2015, Diffusion-reaction modeling of Cu migration in CdTe solar devices. in 18th International Workshop on Computational Electronics, IWCE 2015., 7301962, Institute of Electrical and Electronics Engineers Inc., 18th International Workshop on Computational Electronics, IWCE 2015, West Lafayette, United States, 9/2/15. https://doi.org/10.1109/IWCE.2015.7301962

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title = "Diffusion-reaction modeling of Cu migration in CdTe solar devices",

abstract = "In this work, we report on development of one-dimensional (1D) finite-difference and two-dimensional (2D) finite-element diffusion-reaction simulators to investigate mechanisms behind Cu-related metastabilities observed in CdTe solar cells [1]. The evolution of CdTe solar cells performance has been studied as a function of stress time in response to the evolution of associated acceptor and donor states. To achieve such capability, the simulators solve reaction-diffusion equations for the defect states in time-space domain self-consistently with the free carrier transport. Results of 1-D and 2-D simulations have been compared to verify the accuracy of solutions.",

keywords = "Cadmium compounds, Finite difference methods, Finite element analysis, II-VI semiconductor materials, Mathematical model, Photovoltaic cells, Stress",

author = "D. Guo and D. Brinkman and T. Fang and R. Akis and I. Sankin and Dragica Vasileska and Christian Ringhofer",

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month = oct,

day = "19",

doi = "10.1109/IWCE.2015.7301962",

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T1 - Diffusion-reaction modeling of Cu migration in CdTe solar devices

AU - Guo, D.

AU - Brinkman, D.

AU - Fang, T.

AU - Akis, R.

AU - Sankin, I.

AU - Vasileska, Dragica

AU - Ringhofer, Christian

PY - 2015/10/19

Y1 - 2015/10/19

N2 - In this work, we report on development of one-dimensional (1D) finite-difference and two-dimensional (2D) finite-element diffusion-reaction simulators to investigate mechanisms behind Cu-related metastabilities observed in CdTe solar cells [1]. The evolution of CdTe solar cells performance has been studied as a function of stress time in response to the evolution of associated acceptor and donor states. To achieve such capability, the simulators solve reaction-diffusion equations for the defect states in time-space domain self-consistently with the free carrier transport. Results of 1-D and 2-D simulations have been compared to verify the accuracy of solutions.

AB - In this work, we report on development of one-dimensional (1D) finite-difference and two-dimensional (2D) finite-element diffusion-reaction simulators to investigate mechanisms behind Cu-related metastabilities observed in CdTe solar cells [1]. The evolution of CdTe solar cells performance has been studied as a function of stress time in response to the evolution of associated acceptor and donor states. To achieve such capability, the simulators solve reaction-diffusion equations for the defect states in time-space domain self-consistently with the free carrier transport. Results of 1-D and 2-D simulations have been compared to verify the accuracy of solutions.

KW - Cadmium compounds

KW - Finite difference methods

KW - Finite element analysis

KW - II-VI semiconductor materials

KW - Mathematical model

KW - Photovoltaic cells

KW - Stress

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M3 - Conference contribution

AN - SCOPUS:84958225529

SN - 9780692515235

BT - 18th International Workshop on Computational Electronics, IWCE 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 18th International Workshop on Computational Electronics, IWCE 2015

Y2 - 2 September 2015 through 4 September 2015

ER -

Diffusion-reaction modeling of Cu migration in CdTe solar devices

Abstract

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Keywords

ASJC Scopus subject areas

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