TY - GEN
T1 - Diffusion-reaction modeling of Cu migration in CdTe solar devices
AU - Guo, D.
AU - Brinkman, D.
AU - Fang, T.
AU - Akis, R.
AU - Sankin, I.
AU - Vasileska, Dragica
AU - Ringhofer, Christian
N1 - Publisher Copyright:
© 2015 IWCE.
PY - 2015/10/19
Y1 - 2015/10/19
N2 - In this work, we report on development of one-dimensional (1D) finite-difference and two-dimensional (2D) finite-element diffusion-reaction simulators to investigate mechanisms behind Cu-related metastabilities observed in CdTe solar cells [1]. The evolution of CdTe solar cells performance has been studied as a function of stress time in response to the evolution of associated acceptor and donor states. To achieve such capability, the simulators solve reaction-diffusion equations for the defect states in time-space domain self-consistently with the free carrier transport. Results of 1-D and 2-D simulations have been compared to verify the accuracy of solutions.
AB - In this work, we report on development of one-dimensional (1D) finite-difference and two-dimensional (2D) finite-element diffusion-reaction simulators to investigate mechanisms behind Cu-related metastabilities observed in CdTe solar cells [1]. The evolution of CdTe solar cells performance has been studied as a function of stress time in response to the evolution of associated acceptor and donor states. To achieve such capability, the simulators solve reaction-diffusion equations for the defect states in time-space domain self-consistently with the free carrier transport. Results of 1-D and 2-D simulations have been compared to verify the accuracy of solutions.
KW - Cadmium compounds
KW - Finite difference methods
KW - Finite element analysis
KW - II-VI semiconductor materials
KW - Mathematical model
KW - Photovoltaic cells
KW - Stress
UR - http://www.scopus.com/inward/record.url?scp=84958225529&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84958225529&partnerID=8YFLogxK
U2 - 10.1109/IWCE.2015.7301962
DO - 10.1109/IWCE.2015.7301962
M3 - Conference contribution
AN - SCOPUS:84958225529
T3 - 18th International Workshop on Computational Electronics, IWCE 2015
BT - 18th International Workshop on Computational Electronics, IWCE 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 18th International Workshop on Computational Electronics, IWCE 2015
Y2 - 2 September 2015 through 4 September 2015
ER -